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Infineon IPZ N-Channel MOSFET, 40 A, 40 V, 8-Pin SuperSO8 Surface Mount Package ISZ065N03L5SATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | ISZ065N03L5SATMA1 |
| Mount Type | Surface |
| Series | IPZ |
| Maximum Operating Temperature | 175°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 40A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 1.4mΩ |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Maximum continuous drain current of 40 A ensures robust handling of heavy loads.
- Drain-source voltage (Vds) rated at 40 V for versatility in power applications.
- Compact SuperSO8 5 x 6 mm package type supports surface mounting and space-saving designs.
- Low maximum drain-source resistance of 1.4 mΩ for high efficiency and reduced power loss.
- Typical gate charge of 80 nC optimizes switching performance in high-frequency circuits.
- Power dissipation capability up to 81 W facilitates thermal management in power electronics.
- Wide operating temperature range from -55°C to 175°C supports automotive and industrial standards.
- Compliance with RoHS and AEC-Q101 demonstrates environmental and automotive quality standards.
Product Description
Infineon ISZ065N03L5SATMA1 is a high-performance N-Channel MOSFET designed for industrial and automotive applications requiring efficient power switching and thermal performance. Packaged in a compact 8-Pin SuperSO8 (5 x 6 mm) surface mount format, this device excels in power management.
The MOSFET supports a maximum continuous drain current of 40 A and a maximum drain-source voltage of 40 V, making it suitable for buck converters and other high-frequency switch mode power supplies.
Featuring a low on-resistance (Rds(on)) of 1.4 milliohms, it minimizes conduction losses and improves overall efficiency. The typical gate charge of 80 nC balances fast switching with manageable gate drive power. Its power dissipation rating of 81 W allows effective thermal management in confined spaces.
Designed with automotive-grade reliability standards, including AEC-Q101 qualification and RoHS compliance, the ISZ065N03L5SATMA1 is ideal for automotive electronics, industrial motor drives, and power supply units. The operating temperature range from -55°C to 175°C further ensures robust performance in harsh environments.
Additional product benefits include Pb-free lead plating and halogen-free construction, meeting IEC61249-2-22 standards for environmental safety. This MOSFET’s typical forward voltage is 1.1 V, contributing to its efficient conduction characteristics.
Maximum continuous drain current of 40 A supports heavy load applications. 40 V drain-source voltage rating ensures versatility across power circuits. Compact surface mount SuperSO8 package for space-saving PCB layouts. Low on-resistance of 1.4 mΩ minimizes power loss and heat generation.
Typical gate charge of 80 nC enables high-frequency switching performance. Power dissipation rating of 81 W supports effective thermal design. Wide temperature range (-55°C to 175°C) suitable for automotive and industrial use.
RoHS compliant and automotive AEC-Q101 certified for quality and safety.
This MOSFET is suitable for use in industrial automation, automotive electronics, telecommunications, and power management systems across various commercial and manufacturing sectors.
Explore more Infineon semiconductor solutions and related MOSFET products at EnvMart for enhanced industrial and electronic component procurement.
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Frequently Asked Questions
The maximum continuous drain current for this model is 40 A, allowing it to handle heavy loads efficiently.
This MOSFET has a maximum drain-source voltage rating of 40 V, making it versatile for various power applications.
It is packaged in a compact SuperSO8 format, measuring 5 x 6 mm, suitable for surface mounting.
The maximum power dissipation capability is rated at 81 W, which facilitates effective thermal management.
The typical gate charge is 80 nC, optimizing switching performance in high-frequency applications.
This model operates within a temperature range of -55°C to 175°C, making it suitable for both automotive and industrial environments.
It complies with the AEC-Q101 automotive standard, ensuring quality and reliability for automotive applications.
The maximum gate-source voltage is 20 V, which is important for ensuring proper operation in circuit designs.
The typical forward voltage is 1.1 V, contributing to its efficient conduction characteristics.
It is RoHS compliant and features Pb-free lead plating, meeting IEC61249-2-22 standards for environmental safety.
The low on-resistance of 1.4 mΩ minimizes conduction losses, improving overall efficiency in power applications.
This MOSFET is suitable for use in industrial automation, automotive electronics, telecommunications, and power management systems.
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