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Infineon ISP Type P-Channel MOSFET 1.9 A 60 V Enhancement Mode 3-Pin SOT-223 ISP25DP06NMXTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | ISP25DP06NMXTSA1 |
| Mount Type | Surface |
| Series | ISP |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 1.9A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 1.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- This MOSFET operates in enhancement mode with type P channel configuration.
- It offers a low maximum drain-source resistance of 1.7 milliohms for efficient conduction.
- The device supports a maximum gate-source voltage of 20 V and typical gate charge of 80 nC at Vgs.
- Rated for maximum power dissipation of 81 W and forward voltage of 1.1 V.
- Operating temperature range spans from -55°C to 175°C, suitable for demanding environments.
- Built to meet RoHS compliance and automotive standard AEC-Q101 for reliability.
- Package type SOT-223 with surface mount design and 3 electrical pins for easy PCB integration.
Product Description
Infineon ISP25DP06NMXTSA1 is a P-Channel MOSFET designed for high efficiency and reliability in electronic circuits, featuring a maximum continuous drain current of 1.9 A and maximum drain-source voltage rating of 60 V. Packaged in a compact 3-pin SOT-223 format, it is optimized for surface mount technology (SMT) applications.
This enhancement mode MOSFET provides low on-resistance (1.7 mΩ max), enabling minimal conduction losses and improved circuit performance. The device supports a maximum gate-source voltage of 20 V and typical gate charge of 80 nC, facilitating fast switching capabilities suitable for power management and control.
With a maximum power dissipation rating of 81 W and a wide operating temperature range from -55 °C to 175 °C, this component is suitable for harsh industrial, automotive, and commercial applications requiring durability and robustness.
The MOSFET meets RoHS environmental compliance and adheres to the automotive grade AEC-Q101 standard, ensuring suitability for automotive and other critical applications. Its small SOT-223 surface mount package allows for high-density PCB layouts and easy integration into varied electronic designs.
This P-Channel MOSFET operates with enhancement mode characteristics and low on-resistance. Maximum continuous drain current of 1.9 A ensures efficient load handling. Supported drain-source voltage of 60 V suits various power switching applications.
Compact 3-pin SOT-223 package enables surface mounting on printed circuit boards. Wide temperature tolerance from -55 °C to 175 °C supports industrial operating conditions. RoHS compliant and automotive standard AEC-Q101 certified for reliability.
Typical gate charge of 80 nC allows for fast switching performance.
The Infineon ISP25DP06NMXTSA1 MOSFET is ideal for applications in industrial machinery, automotive electronics, power supply circuits, and general semiconductor needs requiring durable and efficient P-Channel MOSFET solutions.
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Frequently Asked Questions
The maximum continuous drain current of this model is 1.9 A.
It has a maximum drain-source voltage rating of 60 V.
This MOSFET is packaged in a compact SOT-223 format, designed for surface mounting.
The typical gate charge at Vgs is 80 nC.
The maximum power dissipation rating is 81 W.
It operates within a temperature range of -55°C to 175°C.
It meets RoHS compliance and adheres to the automotive standard AEC-Q101.
The maximum gate-source voltage supported is 20 V.
The SOT-223 package has 3 pins.
This model features a P-Channel configuration.
The maximum drain-source resistance is 1.7 mΩ.
It is suitable for industrial machinery, automotive electronics, and power supply circuits.
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