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Infineon ISP Type P-Channel MOSFET, 1.55 A, 100 V, Enhancement Mode, 3-Pin SOT-223 ISP98DP10LMXTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 6.7mm |
| Length | 7.3mm |
| Model | ISP98DP10LMXTSA1 |
| Width | 1.8mm |
| Mount Type | Surface |
| Series | ISP |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 1.55A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 2Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 4.2W |
| Typical Gate Charge Qg @ Vgs | 3.5nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- This P-Channel enhancement mode MOSFET offers a maximum drain current of 1.55 amperes.
- It supports a drain source voltage rating of 100 volts suitable for medium power applications.
- The device features a low typical gate charge of 3.5 nC at Vgs for efficient switching.
- It has a maximum drain source resistance of 2 ohms ensuring good conduction performance.
- The MOSFET is optimized for surface mount applications with a SOT-223 package type.
- Operating temperature range extends from -55°C to 175°C for robust industrial usage.
- Designed with avalanche ruggedness and reverse polarity protection for reliability.
- Ideal for battery management, load switching, and industrial automation applications.
Product Description
Infineon ISP98DP10LMXTSA1 is a P-Channel MOSFET designed for efficient medium and low power electronic applications. It features an enhancement mode channel that delivers a maximum continuous drain current of 1.55 A and can withstand drain source voltages up to 100 V. This device is housed in a 3-pin SOT-223 surface mount package measuring 7.3 mm in length, 6.7 mm in height, and 1.8 mm in width, facilitating its integration into compact circuit designs.
With a maximum drain source resistance of 2 ohms and a low typical gate charge of 3.5 nC at Vgs, the MOSFET ensures fast switching and reduced power loss, enhancing overall efficiency. Its maximum power dissipation rating is 4.2 W, making it suitable for a diverse range of industrial applications including battery management systems, load switching circuits, and reverse polarity protection.
The MOSFET operates reliably over a wide temperature range from -55°C to 175°C, supporting high operating conditions. Its avalanche ruggedness adds to its durability in demanding environments. The device does not carry specific automotive or industrial standards certifications but is designed with robust performance characteristics.
This P-Channel MOSFET facilitates simpler design complexity in medium and low power circuits. Its surface mount SOT-223 package conforms to industry-standard footprints enabling easy PCB integration. Avalanche ruggedness capability ensures resistance to voltage spikes and enhances device reliability.
Low on-resistance improves efficiency, particularly in battery-powered and industrial automation control circuits. It is suitable for both high and low switching frequency applications. The device operates on a maximum gate-source voltage of 20 V and features a forward voltage drop of 1.2 V.
Infineon ISP98DP10LMXTSA1 P-Channel MOSFET is suitable for electronics manufacturing, industrial automation, and battery management systems requiring reliable switching and protective characteristics. Availability in reel packaging supports high-volume manufacturing and automated assembly processes.
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Frequently Asked Questions
The maximum continuous drain current of this P-Channel MOSFET is 1.55 A.
This model supports a maximum drain-source voltage rating of 100 V.
It is housed in a SOT-223 package, measuring 7.3 mm in length, 6.7 mm in height, and 1.8 mm in width.
The typical gate charge at Vgs for this MOSFET is 3.5 nC.
The maximum power dissipation rating for this model is 4.2 W.
It operates over a temperature range from -55°C to 175°C.
The maximum gate-source voltage for this device is 20 V.
The forward voltage drop for this model is 1.2 V.
The maximum drain-source resistance is 2 ohms.
It is suitable for battery management systems, load switching circuits, and industrial automation applications.
This model has a pin count of 3.
It is designed with avalanche ruggedness and reverse polarity protection to enhance reliability.
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