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Infineon ISP Type P-Channel MOSFET, 2.8 A Drain Current, 60 V Drain-Source Voltage, Enhancement Mode, 3-Pin ISP12DP06NMXTSA1

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Infineon ISP Type P-Channel MOSFET, 2.8 A Drain Current, 60 V Drain-Source Voltage, Enhancement Mode, 3-Pin ISP12DP06NMXTSA1

Name: Infineon ISP Type P-Channel MOSFET, 2.8 A Drain Current, 60 V Drain-Source Voltage, Enhancement Mode, 3-Pin ISP12DP06NMXTSA1
Brand: Infineon
SKU: 179032
Price: 0.61 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Model	ISP12DP06NMXTSA1
Mount Type	Surface
Series	ISP
Maximum Operating Temperature	175°C
Package Type	SOT-223
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	Type P
Maximum Continuous Drain Current Id	2.8A
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	1.7mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	81W
Typical Gate Charge Qg @ Vgs	80nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.1V

Key Features

Enhancement mode device designed for surface mount applications.
Low on-resistance of 1.7 milliohms ensures efficient conduction.
Supports maximum gate-source voltage of ±20 V for safe operation.
High power dissipation rated at 81 W for demanding conditions.
Wide operating temperature range from -55°C to 175°C allows for versatility.
Fast switching capabilities with typical gate charge of 80 nC at Vgs.
Compliant with RoHS and automotive standard AEC-Q101 for quality assurance.
Forward voltage drop of 1.1 V aids in reducing power loss.

Product Description

Infineon ISP12DP06NMXTSA1 is a P-Channel MOSFET featuring a maximum continuous drain current of 2.8 A and a drain-source voltage rating of 60 V. Packaged in a 3-pin SOT-223 surface mount format, this enhancement mode MOSFET is engineered for efficient power switching and management.

This device showcases a low on-resistance of 1.7 milliohms, enabling minimal conduction losses and improved energy efficiency in circuits. It operates reliably over a broad temperature range from -55°C to 175°C, making it suitable for demanding industrial and automotive environments. The maximum gate-source voltage of ±20 V allows safe drive voltage handling, while the typical gate charge of 80 nC supports fast switching applications.

The MOSFET's maximum power dissipation value of 81 watts underlines its capability to handle significant power loads with stability. The forward voltage of 1.1 V further contributes to overall efficiency, minimizing voltage drop across the device during operation.

Designed with Pb-free lead plating, it complies with RoHS standards and meets the automotive qualification standard AEC-Q101, ensuring reliability and eco-friendliness.

This Infineon MOSFET is ideal for use in electronic components, power management modules, automotive applications, and industrial circuitry, especially in designs requiring a logic-level compatible P-Channel MOSFET that interfaces easily with microcontrollers and other logic devices.

Enhancement mode P-Channel MOSFET in compact SOT-223 package. Maximum continuous drain current of 2.8 amperes for moderate power loads. Drain-source voltage rating up to 60 volts for versatile application. Low on-resistance reduces circuit losses and heat generation.

Wide operating temperature range (-55°C to 175°C) supports harsh environments. Compliant with RoHS and AEC-Q101 automotive standards. Surface mount design for space-saving PCB layouts.

Explore similar Infineon MOSFETs and power semiconductors to optimize your electronic designs and ensure efficient, reliable operation in laboratory, industrial, automotive, and commercial equipment.