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Infineon IPA Type N-Channel MOSFET, 11 A Drain Current, 40 V Drain Source Voltage, 7-Pin TO-263 Package IRL40SC209
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IRL40SC209 |
| Mount Type | Surface |
| Series | IPA |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Typical Applications | DC motors, battery management systems,inverters, and DC-DC converters |
| Standards/Approvals | RoHS |
| Pin Count | 7 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 2.9mΩ |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Designed for surface mount applications with a D2PAK package.
- Low drain-source resistance of 2.9 milliohms ensuring high efficiency.
- Maximum power dissipation of 81 W suitable for demanding electronic circuits.
- Wide operating temperature range from -55°C to 175°C for reliable performance.
- Typical gate charge of 80 nC for efficient switching operations.
- Compliant with RoHS and automotive AEC-Q101 standards for quality and safety.
- Typical forward voltage of 1.2 V optimizing power efficiency.
- Ideal for applications including DC motors, battery management systems, inverters, and DC-DC converters.
Product Description
Infineon IRL40SC209 IPA Type N-Channel MOSFET is a high-performance discrete semiconductor device supplied in a 7-pin TO-263 (D2PAK) surface-mount package. This MOSFET supports a continuous drain current of 11 A and can withstand a maximum drain source voltage of 40 V, making it suitable for robust power switching applications.
The device delivers a low drain-source resistance of 2.9 milliohms, enabling efficient conduction and minimizing power losses. Its maximum power dissipation rating is 81 W, allowing the component to handle significant loads while maintaining thermal stability across a wide temperature range from -55°C to 175°C.
Featuring a typical gate charge of 80 nC at Vgs, it facilitates rapid switching with reduced drive power requirements. The MOSFET has a forward voltage drop of 1.2 V contributing to overall energy efficiency in circuits.
This product complies with RoHS regulations and meets the automotive industry-standard AEC-Q101, ensuring suitability for rigorous automotive and industrial applications. Typical use cases include driving DC motors, managing battery systems, inverter circuits, and DC-DC converters.
Surface mount TO-263 (D2PAK) package with 7 pins. Continuous drain current rating of 11 A and voltage rating of 40 V. Low Rds(on) value of 2.9 mΩ for high efficiency. Power dissipation capability up to 81 W. Wide temperature operating range from -55°C to 175°C.
AEC-Q101 certification supporting automotive use. Applications include automotive, industrial, and power electronics.
This MOSFET is a reliable choice for electronic designers demanding durable, efficient, and compliant switching components. Explore more semiconductor solutions on EnvMart to meet your industrial and electronic design needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 11 A.
It has a maximum drain-source voltage rating of 40 V.
This MOSFET can handle a maximum power dissipation of 81 W.
The typical gate charge for this model is 80 nC at Vgs.
It features a low drain-source resistance of 2.9 milliohms, which enhances efficiency.
The operating temperature range is from -55°C to 175°C.
This unit is supplied in a 7-pin TO-263 (D2PAK) surface-mount package.
Yes, it is compliant with RoHS regulations and meets the automotive AEC-Q101 standard.
Typical applications include driving DC motors, battery management systems, inverters, and DC-DC converters.
The typical forward voltage drop is 1.2 V, which optimizes power efficiency.
The maximum gate-source voltage for this model is 20 V.
This unit features a Type N channel configuration.
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