Nexperia Low Saturation Voltage PNP Bipolar Junction Transistor TSOP 6-Pin, -1 A, -60 V PBSS5160DS,115

Nexperia PBSS5160DS,115 is a low saturation voltage PNP Bipolar Junction Transistor (BJT) housed in a compact 6-pin TSOP surface mount package. This transistor is designed to deliver high efficiency and low heat generation due to its reduced collector-emitter saturation voltage, making it ideal for switching and digital circuit applications in industrial and automotive environments.

It supports a maximum DC collector current of -1 A and a maximum collector-emitter voltage of -60 V, allowing it to handle moderate power switching tasks reliably. The transistor also features a maximum power dissipation of 700 mW and a minimum DC current gain of 100, ensuring efficient amplification in signal processing roles.

Signed for automotive usage compliance, the transistor meets the stringent AEC-Q101 standard to guarantee operation longevity and robustness under demanding conditions. Its operating temperature range from -65°C to 150°C further supports use in harsh environments such as automotive electronics, industrial control systems, and other commercial applications.

The device configuration is isolated and has PNP polarity, which is commonly preferred in low voltage switching circuits. With a maximum transition frequency of 185 MHz, it can perform high-speed switching necessary for modern electronic equipment. The TSOP package with surface mount type allows for dense PCB design saving valuable board space.

Physical dimensions of the transistor are compact at 1 mm height, 2.9 mm length, and 1.5 mm width, facilitating integration into space-constrained electronic assemblies. The transistor is RoHS compliant, ensuring it meets environmental and safety regulations.

This transistor can handle a maximum DC collector current of -1 A. It supports a maximum collector-emitter voltage of -60 V ensuring high voltage tolerance. The device features a maximum power dissipation rating of 700 mW for reliable operation.

It has a minimum DC current gain (hFE) of 100, ensuring efficient current amplification. The transistor supports a maximum transition frequency of 185 MHz for high-speed switching. It is built with a PNP transistor polarity and isolated transistor configuration.

The package type is TSOP with surface mount, suitable for compact PCB layouts. Designed for automotive use, it meets the AEC-Q101 standard for automotive semiconductor reliability. Operating temperature range spans from -65°C to 150°C, suitable for harsh environmental conditions.

Compact dimensions include a height of 1 mm, length 2.9 mm, and width 1.5 mm.

This transistor is widely used in industrial electronics, automotive circuit designs, manufacturing automation, and in digital electronic systems where reliable switching and signal amplification are required.

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