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Infineon IQE Type N-Channel MOSFET 253 A 30 V 8-Pin PQFN IQE008N03LM5CGATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Length | 3.3mm |
| Model | IQE008N03LM5CGATMA1 |
| Mount Type | Surface |
| Series | IQE |
| Maximum Operating Temperature | 150°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 253A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.85mΩ |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 16V |
| Forward Voltage Vf | 0.73V |
Key Features
- Features low on-resistance of 0.85 milliohms for efficient power management.
- Maximum power dissipation is rated at 81 watts for reliable operation.
- Contains a typical gate charge of 80 nanoCoulombs at Vgs.
- Operates within a temperature range from -55°C to 150°C for harsh environments.
- Compliant with RoHS and automotive AEC-Q101 standards.
- Surface mount package with compact dimensions of 3.3 mm length.
- Maximum gate-source voltage is 16 volts ensuring device safety.
- Forward voltage drop is 0.73 volts optimizing conduction efficiency.
Product Description
Infineon's IQE008N03LM5CGATMA1 is a high-performance Type N-Channel MOSFET designed for demanding electronic applications requiring high current and low voltage switching capability. This device supports continuous drain currents up to 253 amperes and a drain-source voltage of 30 volts, encapsulated in a compact 8-pin PQFN package measuring 3.3 mm in length. Its robust design allows operation in a wide temperature range from -55°C to 150°C, suitable for automotive and industrial applications.
The MOSFET offers an extremely low on-resistance of 0.85 milliohms which ensures minimal conduction losses and higher efficiency in power circuits. With a typical gate charge of 80 nanoCoulombs, the device enables fast switching performance reducing power dissipation during transitions. Designed for surface mounting, it greatly facilitates modern PCB assembly techniques and supports automated production.
This MOSFET complies with the Restriction of Hazardous Substances (RoHS) directive and meets automotive standard AEC-Q101, indicating reliability in automotive electronic systems. Maximum power dissipation is rated at 81 watts, accommodating demanding load conditions with sufficient thermal margin. A maximum gate-source voltage rating of 16 volts protects against over-voltage damage while the forward voltage of 0.73 volts improves conduction efficiency.
Applications for this Infineon MOSFET include power management in automotive electronics, industrial motor drives, DC-DC converters, and other high-current, low-voltage switching scenarios. Its high thermal capability and advanced power density contribute to reduced cooling requirements and compact system design.
The IQE series from Infineon is recognized for superior layout flexibility and PCB thermal optimization, making this MOSFET ideal for high-efficiency power modules. This product is an excellent choice for engineers seeking reliable, high-performance semiconductor solutions in automotive, industrial, manufacturing, and commercial electronics sectors.
Extremely low on-resistance at 0.85 mΩ for enhanced efficiency. Wide operating temperature range from -55°C to 150°C for harsh conditions. Compliant with RoHS and automotive AEC-Q101 reliability standards. Compact 8-pin PQFN package facilitates space-saving PCB designs.
High maximum continuous drain current rated at 253 amperes. Maximum power dissipation rated at 81 watts for demanding applications. Explore more advanced semiconductor products and power solutions in the Infineon category on EnvMart for industrial, automotive, and electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current of this model is rated at 253 amperes.
This MOSFET supports a maximum drain-source voltage of 30 volts.
It features an extremely low on-resistance of 0.85 milliohms, enhancing conduction efficiency.
The typical gate charge at Vgs is 80 nanoCoulombs.
It operates within a temperature range from -55°C to 150°C, making it suitable for harsh environments.
The maximum power dissipation is rated at 81 watts, accommodating demanding load conditions.
This model is encapsulated in a compact 8-pin PQFN package.
It complies with the automotive standard AEC-Q101, indicating reliability in automotive applications.
The maximum gate-source voltage is rated at 16 volts, ensuring device safety.
The forward voltage drop is 0.73 volts, optimizing conduction efficiency.
It is designed for surface mounting, facilitating modern PCB assembly techniques.
The country of origin for this MOSFET is India.
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