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Vishay Type N-Channel Depletion MOSFET 214 A 40 V 8-Pin PowerPAK 1212-8SLW SQS140ENW-T1_GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Length | 3.3mm |
| Model | SQS140ENW-T1_GE3 |
| Mount Type | Surface |
| Maximum Operating Temperature | 125°C |
| Package Type | PowerPAK 1212-8SLW |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 214A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.000253Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 197W |
| Typical Gate Charge Qg @ Vgs | 38nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- The device features a low on-resistance of 0.000253 ohms for high efficiency.
- It supports a maximum power dissipation of 197 W for demanding applications.
- The MOSFET is packaged in an 8-pin PowerPAK 1212-8SLW surface mount package.
- Operating temperature ranges from -55°C to 125°C for robustness.
- Maximum gate-source voltage is ±20 V ensuring safe operating limits.
- The device is AEC-Q101 qualified for automotive applications.
- Forward voltage drop is typically 1.1 V contributing to efficient switching.
- Typical gate charge is 38 nC at Vgs, enabling fast switching speeds.
Product Description
Vishay SQS140ENW-T1_GE3 is a high-power N-Channel Depletion Mode MOSFET designed for applications requiring high current and low voltage operation. Rated at a continuous drain current of 214 A and a maximum drain-source voltage of 40 V, it suits power-dense environments.
This MOSFET utilizes the advanced TrenchFET Gen IV technology to provide very low on-resistance of 0.000253 ohms, which reduces conduction losses and improves power efficiency during operation.
The device is housed in a compact 8-Pin PowerPAK 1212-8SLW package with surface mount technology, offering enhanced thermal performance and ease of PCB integration for industrial and automotive electronics.
It operates reliably under harsh conditions with an operating temperature range from -55°C to 125°C, supporting demanding industrial and automotive environments. The maximum gate-source voltage is ±20 V, protecting the device during switching with a typical forward voltage of 1.1 V.
The typical gate charge of 38 nC at gate-source voltage allows for rapid switching response, making it ideal for power management and motor control systems.
This product is compliant with AEC-Q101 automotive standards, making it suitable for automotive and high-reliability applications in laboratory equipment, manufacturing machinery, and HVAC control systems.
The device features a low on-resistance of 0.000253 ohms for high efficiency. It supports a maximum power dissipation of 197 W for demanding applications. Operating temperature ranges from -55°C to 125°C for robustness in extreme environments.
Maximum gate-source voltage of ±20 V ensures device protection and reliable operation. Typical forward voltage of 1.1 V reduces voltage drop and power loss. Typical gate charge of 38 nC enables fast and efficient switching.
Compact 8-pin PowerPAK 1212-8SLW package for easy surface mounting. AEC-Q101 qualification for automotive-grade reliability. Explore more Vishay Power MOSFETs and semiconductor components at EnvMart for industrial, automotive, laboratory, and manufacturing applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 214 A.
This MOSFET has a maximum drain-source voltage rating of 40 V.
It supports a maximum power dissipation of 197 W for demanding applications.
The device features a low on-resistance of 0.000253 ohms, contributing to high efficiency.
The typical gate charge at gate-source voltage is 38 nC.
It operates reliably within an operating temperature range of -55°C to 125°C.
The typical forward voltage drop is 1.1 V, which helps in reducing power loss during operation.
It is packaged in an 8-pin PowerPAK 1212-8SLW surface mount package.
Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.
The maximum gate-source voltage is ±20 V, ensuring safe operating limits.
This device is an N-channel depletion mode MOSFET.
The length of this model is 3.3 mm.
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