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Vishay SiR Type N-Channel MOSFET 116 A 80 V 8-Pin PowerPAK SO-8 SiR582DP-T1-RE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Length | 6.15mm |
| Model | SiR582DP-T1-RE3 |
| Width | 5.15mm |
| Mount Type | Surface |
| Series | SiR |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK SO-8 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 116A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 0.0034Ω |
| Maximum Power Dissipation Pd | 92.5W |
| Typical Gate Charge Qg @ Vgs | 33.5nC |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Features an 8-pin PowerPAK SO-8 package for surface mounting.
- Offers a low drain-source resistance of 0.0034 Ω, enabling minimal conduction losses.
- Typical gate charge is 33.5 nC at Vgs, supporting fast switching.
- Maximum continuous drain current of 116 A for high current applications.
- Designed to dissipate up to 92.5 W power to ensure thermal reliability.
- Rated to operate between -55°C and 150°C, suitable for harsh environments.
- Maximum gate-source voltage of 20 V protects gate integrity.
- Compact dimensions with 6.15 mm length and 5.15 mm width enable PCB space optimization.
Product Description
The Vishay SiR582DP-T1-RE3 is a high-performance Type N-Channel MOSFET designed for demanding power applications. It supports a maximum continuous drain current of 116 A and withstands drain-source voltages up to 80 V, making it suitable for synchronous rectification, primary side switching, DC/DC converters, and motor drive switches in industrial and electronic systems.
This MOSFET comes in an 8-pin PowerPAK SO-8 surface-mount package, providing a compact footprint and efficient thermal management. Its extremely low drain-source resistance of 0.0034 Ω minimizes conduction losses, enhancing energy efficiency in power circuits.
The device features a typical gate charge of 33.5 nC, enabling fast switching speeds essential for high-frequency applications. It handles power dissipation up to 92.5 W and operates reliably in a wide temperature range from -55°C to 150°C, ensuring robustness in industrial environments.
The maximum gate-source voltage rating of 20 V safeguards gate integrity during operation. With dimensions of 6.15 mm length and 5.15 mm width, this MOSFET is optimized for modern PCB designs requiring compact, high-power components.
8-pin PowerPAK SO-8 surface mount package. Maximum 116 A continuous drain current. Drain-source voltage rating of 80 V. Extremely low Rds(on) of 0.0034 Ω. Typical gate charge of 33.5 nC for efficient switching. Power dissipation up to 92.5 W.
Operational temperature range from -55°C to 150°C. RoHS compliant for environmental safety.
Ideal for industrial electronics, motor control, DC/DC converters, and power management systems. This device combines efficiency, reliability, and compactness required for modern electronic equipment.
Explore more Vishay semiconductor products and advanced MOSFET solutions within the EnvMart platform to equip your projects with trusted electronic components.
Explore more products in our Power MOSFET category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 116 A, making it suitable for high current applications.
It has a maximum drain-source voltage rating of 80 V, allowing it to handle significant voltage levels in power applications.
The typical gate charge is 33.5 nC at Vgs, which supports fast switching capabilities essential for high-frequency applications.
This model has dimensions of 6.15 mm in length and 5.15 mm in width, optimizing space on PCBs.
It can dissipate up to 92.5 W, ensuring thermal reliability in demanding applications.
The operating temperature range is from -55°C to 150°C, making it suitable for harsh environments.
It comes in an 8-pin PowerPAK SO-8 surface-mount package, which provides a compact footprint for efficient thermal management.
The maximum gate-source voltage is rated at 20 V, which helps protect gate integrity during operation.
It features an extremely low drain-source resistance of 0.0034 Ω, minimizing conduction losses in power circuits.
Yes, this MOSFET is RoHS compliant, ensuring it meets environmental safety standards.
This model is designed for synchronous rectification, primary side switching, DC/DC converters, and motor drive switches in industrial and electronic systems.
It is a Type N-Channel MOSFET, suitable for various power applications.
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