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Infineon ISC Type N-Channel MOSFET 98 A 40 V 8-Pin TDSON-8 FL ISC036N04NM5ATMA1

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Infineon ISC Type N-Channel MOSFET 98 A 40 V 8-Pin TDSON-8 FL ISC036N04NM5ATMA1

Name: Infineon ISC Type N-Channel MOSFET 98 A 40 V 8-Pin TDSON-8 FL ISC036N04NM5ATMA1
Brand: Infineon
SKU: 112447
Price: 0.38 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	4.4mm
Length	3.8mm
Model	ISC036N04NM5ATMA1
Width	1.1mm
Mount Type	Surface
Series	ISC
Maximum Operating Temperature	175°C
Package Type	TDSON-8 FL
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	Type N
Maximum Continuous Drain Current Id	98A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	2.8mΩ
Maximum Power Dissipation Pd	63W
Typical Gate Charge Qg @ Vgs	28nC
Maximum Gate Source Voltage Vgs	20V

Key Features

This MOSFET provides very low on-resistance to enhance efficiency.
It features a maximum power dissipation of 63 watts for high performance.
The device operates reliably from -55°C up to 175°C junction temperature.
Typical gate charge of 28 nC reduces switching losses during operation.
It has a gate source voltage maximum rating of 20 V ensuring robustness.
Its size dimensions are compact with length 3.8 mm, width 1.1 mm, and height 4.4 mm.
Designed for battery-powered and low-voltage motor drive applications.
Pb-free lead plating makes it RoHS compliant and environmentally safe.

Product Description

Infineon ISC036N04NM5ATMA1 is a high-performance Type N-Channel MOSFET designed for medium-power electronic applications requiring efficient switching and durability. The device features a continuous drain current rating of 98A and a drain source voltage rating of 40V, making it suitable for a variety of industrial, automotive, and consumer electronics uses.

Housed in an 8-Pin TDSON-8 FL package, this surface-mount component measures just 3.8 mm in length, 1.1 mm in width, and 4.4 mm in height. It supports maximum power dissipation of up to 63 watts, while maintaining reliable operation across a temperature range from -55°C to 175°C junction temperature.

The Infineon OptiMOS 5 technology incorporated in this MOSFET delivers a benchmark solution with very low on-resistance and a typical gate charge of 28 nC at Vgs, significantly reducing switching losses and improving efficiency in battery-powered and low-voltage motor drive systems. The high threshold voltage enhances noise immunity to prevent false turn-on, critical in noisy electronic environments.

Robust features include a maximum gate source voltage of 20 V, 100% avalanche testing to secure device integrity against voltage spikes, and lead plating compliant with RoHS directives, ensuring environmental safety. This MOSFET is halogen-free according to IEC61249-2-21 standards, catering to green manufacturing requirements.

Ideal use cases for this MOSFET include industrial automation, power supply regulation, battery management, electric vehicle motor controls, and consumer electronics power stages requiring efficient high current switching components.

Provides 98 A continuous current and 40 V drain source voltage ratings. Compact 8-Pin TDSON-8 FL surface mount package. Ensures low switching losses with a typical gate charge of 28 nC. Wide operating temperature range of -55°C to 175°C for harsh environments.

Designed with high threshold voltage for noise immunity. Reliability assured by 100% avalanche testing. Environmentally compliant with Pb-free and halogen-free standards. Suitable for battery-powered and low-voltage motor drive applications.

Superior thermal resistance enabling higher frequency operation. Contributes to efficient and robust power management in various equipment. Explore additional Infineon semiconductor products and components on EnvMart for reliable industrial and electronics solutions.