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Nexperia N-Channel MOSFET 1.05 A, 20 V Enhancement Mode, 3-Pin SOT-23 Package BSH105,215

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Nexperia N-Channel MOSFET 1.05 A, 20 V Enhancement Mode, 3-Pin SOT-23 Package BSH105,215

Name: Nexperia N-Channel MOSFET 1.05 A, 20 V Enhancement Mode, 3-Pin SOT-23 Package BSH105,215
Brand: Nexperia
SKU: 164532
Price: 0.2 USD
Availability: InStock

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Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Height	1mm
Length	3mm
Model	BSH105,215
Width	1.4mm
Mount Type	Surface
Series	BSH105
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	1.05A
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	200mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	417mW
Typical Gate Charge Qg @ Vgs	3.9nC
Maximum Gate Source Voltage Vgs	-8, +8V
Forward Voltage Vf	1V
onsemi N-Channel MOSFET, 3.2 A, 20 V Enhancement, 3-Pin SOT-23 NTR4501NT1GBrand	onsemi

Key Features

This MOSFET operates in enhancement mode for switching applications.
Maximum continuous drain current of 1.05 A allows moderate power handling.
Package type is compact SOT-23 surface mount for PCB integration.
Low on-resistance of 200 milliohms reduces conduction losses.
Can operate between -55°C and 150°C providing wide thermal stability.
Maximum power dissipation is 417 milliwatts for device safety.
Typical gate charge is 3.9 nanocoulombs enabling fast switching speeds.
Forward voltage drop is approximately 1 volt, minimizing energy loss.

Product Description

Nexperia BSH105,215 is a reliable N-Channel MOSFET featuring a maximum continuous drain current of 1.05 A and a maximum drain-source voltage of 20 V. This enhancement mode transistor comes in a compact 3-pin SOT-23 surface mount package, making it ideal for space-constrained electronic circuits.

Designed for efficient switching, this MOSFET exhibits a low drain-source resistance of 200 milliohms that enables reduced conduction losses and improved overall circuit efficiency. Its maximum power dissipation rating of 417 milliwatts allows safe operation under moderate load conditions.

Operational temperature ranges from -55°C to 150°C, providing robust thermal tolerance for industrial, automotive, and consumer electronics applications. The device supports gate voltages up to ±8 V, with a typical gate charge of 3.9 nanocoulombs, which facilitates rapid switching performance in high-speed circuits.

The forward voltage drop is approximately 1 V, contributing to minimal power loss during conduction. Nexperia BSH105,215 MOSFETs are well suited for use in power management, load switching, and signal amplification in various semiconductor-based electronic components.

This transistor supports enhancement mode operation with N-channel conduction. Surface mount SOT-23 package enables compact PCB layouts. Wide operating temperature range for diverse environments. Low gate charge and on-resistance enhance switching efficiency.

Compliant with industry standards though no specific certifications are assigned.

This product is ideal for engineers and designers working in electronics, power supply design, and semiconductor device applications. Explore more semiconductor products and components on EnvMart to find the best fit for your project requirements.