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Infineon 600 V 17 A Type N-Channel Enhancement MOSFET ThinPAK 5-Pin Surface Mount IPL60R

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Infineon 600 V 17 A Type N-Channel Enhancement MOSFET ThinPAK 5-Pin Surface Mount IPL60R

Name: Infineon 600 V 17 A Type N-Channel Enhancement MOSFET ThinPAK 5-Pin Surface Mount IPL60R
Brand: Infineon
SKU: 111347

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	1.1mm
Length	8.1mm
Model	IPL60R
Width	8.1mm
Mount Type	Surface
Series	IPL60R
Maximum Operating Temperature	150°C
Package Type	ThinPAK
Minimum Operating Temperature	-40°C
Pin Count	5
Channel Type	Type N
Maximum Continuous Drain Current Id	17A
Maximum Drain Source Voltage Vds	600V
Maximum Drain Source Resistance Rds	120mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	103W
Typical Gate Charge Qg @ Vgs	34nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	0.9V

Key Features

Features a maximum continuous drain current of 17 A.
Designed for high power dissipation of up to 103 W.
Offers a low maximum drain-source resistance of 120 mΩ for efficiency.
Supports a maximum gate-source voltage of 20 V for robust switching.
Operates reliably between -40°C and 150°C ambient temperatures.
ThinPAK package type suitable for surface mount applications.
Enhancement channel mode for efficient conduction control.
Typical gate charge of 34 nC at Vgs = 4 V supports fast switching.

Product Description

Infineon IPL60R is a Type N-Channel MOSFET designed for power applications requiring efficient switching performance and high current capability. This device operates at a maximum drain-source voltage of 600 V with a continuous drain current rating of 17 A, ensuring a high level of robustness for industrial and consumer power electronics.

The ThinPAK 5-pin surface mount package offers a compact footprint with physical dimensions approximately 8.1 mm by 8.1 mm and a height of 1.1 mm. The MOSFET features an enhancement mode channel and a low Rds(on) value of 120 mΩ, contributing to reduced conduction losses and improved overall efficiency.

With a maximum allowable gate-source voltage of 20 V and a typical gate charge of 34 nC at a gate voltage of 4 V, the IPL60R is capable of fast switching, making it suitable for applications such as power factor correction (PFC), high-power chargers, and other hard-switching topologies.

Thermal performance supports operation up to 150°C with a minimum operating temperature of -40°C, enabling reliable use in demanding environments. The device's rugged body diode and best-in-class figure of merit improve performance in switching circuits, reducing turn-off losses significantly compared to previous CoolMOS CP series.

This MOSFET series is ideal for industrial power supplies, automotive electronics, renewable energy systems, and general-purpose power switching devices. The IPL60R balances efficiency, power rating, and compact packaging to optimize system size and performance.

Features a maximum continuous drain current of 17 A. Supports a maximum drain-source voltage of 600 V. Employs a 5-pin ThinPAK surface mount package. Enhancement mode N-channel MOSFET with low Rds(on) of 120 mΩ. Maximum power dissipation rating of 103 W.

Operating temperature range from -40°C to 150°C. Typical gate charge of 34 nC supports efficient switching. Offers rugged body diode for high reliability in switching applications. Compact size: 8.1 mm x 8.1 mm x 1.1 mm.

Explore more Infineon discrete semiconductors and MOSFET solutions at EnvMart for powering advanced electronics and industrial applications.