DiodesZetex P-Channel Enhancement Mode MOSFET, 200 mA, 30 V, 3-Pin X2-DFN DMP32D9UFO-7B

DiodesZetex DMP32D9UFO-7B is a P-Channel enhancement mode MOSFET optimized to minimize on-state resistance and maintain excellent switching performance. Rated with a maximum continuous drain current of 200 mA and maximum drain-source voltage of 30 V, this transistor is ideal for compact, high-efficiency power management applications.

The MOSFET is housed in a low-profile 3-pin X2-DFN package measuring 0.65 mm in length, 0.45 mm in width, and 0.4 mm in height, allowing for efficient surface mounting on printed circuit boards where space savings are critical.

This device offers a maximum power dissipation of 320 mW, making it suitable for low-power switching scenarios commonly found in consumer electronics, automotive systems, and industrial control circuits. The maximum operating temperature of 150°C and minimum of -55°C ensure reliability across a wide range of environmental conditions.

Key electrical characteristics include a maximum drain-source resistance of 5 Ω and a typical gate charge of 0.35 nC at Vgs, promoting efficient gate driving and reduced power losses. Its forward voltage is approximately -1 V.

Notably, the MOSFET complies with AEC-Q101 automotive standards, enabling use in automotive electronics where reliability and quality are paramount. Enhancement mode P-channel MOSFET suitable for precision power management.

Compact low-profile surface-mount package. Suitable for automotive and industrial applications due to robust operating temperature. Low gate charge ensures fast switching with minimal energy loss. Compliance with industry automotive standards (AEC-Q101).

This semiconducting device is well-suited for electronic, automotive, industrial, and power management applications requiring efficient switching and compact footprint. Explore more electronic components and semiconductor devices on EnvMart.