onsemi NTMFS Type N-Channel MOSFET 78 A 40 V Enhancement 5-Pin DFN NTMFS5C460NLT1G

onsemi NTMFS5C460NLT1G is a Type N-Channel Power MOSFET designed for discrete semiconductor applications requiring reliable and efficient switching. It provides a maximum continuous drain current of 78 A and withstands a maximum drain source voltage of 40 V, packaged in a compact 5-pin DFN format.

Engineered for surface mount technology, this MOSFET features a low drain-source resistance of 7.2 mΩ, which contributes to high conduction efficiency and low power loss during operation. The device operates with an enhancement mode channel for enhanced switching characteristics suitable for power electronics.

Its thermal operating range spans from -55°C up to a maximum of 175°C, making it suitable for demanding industrial, automotive, and electronic applications. The typical gate charge at a given gate-source voltage ensures swift response times, critical in power switching designs.

The MOSFET supports a maximum gate-source voltage of 20 V and power dissipation up to 50 W, supporting high current loads effectively. Forward voltage drop at 0.88 V limits power losses, enhancing performance in power management circuits.

Dimensions are kept minimal with a length of 5.1 mm, width of 6.1 mm, and height of 1.05 mm, facilitating compact PCB layouts and integration into high-density electronic assemblies.

Supports surface mount installation for PCB integration. Low maximum drain source resistance of 7.2 mΩ ensures efficient conduction. Designed with enhancement channel mode for reliable switching. Operates in a temperature range from -55°C to 175°C for industrial applications.

Typical gate charge is 23 nC at Vgs, facilitating fast switching. Maximum gate source voltage is rated at 20 V for safe operation. Maximum power dissipation of 50 W supports high power handling. Forward voltage drop of 0.88 V minimizes energy loss.

Compact dimensions: 5.1 mm length, 6.1 mm width, 1.05 mm height. Suitable for discrete semiconductor uses in electronic and power applications. This power MOSFET is ideal for industrial electronics, power control, automotive systems, and manufacturing sectors requiring efficient and robust semiconductor switching devices.

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