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Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V, Enhancement Mode, 3-Pin TO-263 IRF3205STRLPBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Infineon |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | IRF3205STRLPBF |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 110A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 200W |
| Typical Gate Charge Qg @ Vgs | 146nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- This MOSFET operates in enhancement mode delivering low conduction losses.
- Features a maximum power dissipation of 200 W ensuring robust performance.
- Has a forward voltage drop of 1.3 V for efficient switching.
- Designed for surface mount applications with 3 pins in a TO-263 form factor.
- Operates reliably across a temperature range from -55°C to 175°C.
- Typical gate charge at Vgs is 146 nC enabling fast switching speeds.
- Maximum gate-source voltage is rated at ±20 V providing good control robustness.
- Compact dimensions of 10.67 mm length, 9.65 mm width, and 4.83 mm height.
Product Description
Infineon IRF3205STRLPBF is a high-performance N-Channel Power MOSFET from Infineon's HEXFET series. This enhancement mode MOSFET is tailored for power switching applications with a maximum continuous drain current of 110 A and a drain-source voltage rating of 55 V. The device comes housed in a 3-pin TO-263 surface mount package, which allows efficient heat dissipation and easy board integration.
This MOSFET features low on-resistance, with a typical Rds(on) of 8 mΩ, minimizing conduction losses and improving system efficiency. The forward voltage drop of 1.3 V supports low voltage drop applications, while the typical gate charge of 146 nC enables fast switching performance. Maximum gate-source voltage is limited to ±20 V to protect gate integrity during operation.
Rated for continuous operation between -55°C and 175°C, this MOSFET offers robust thermal margins, suitable for demanding industrial and power electronics environments. The compact dimensions of the TO-263 package measure 10.67 mm in length, 9.65 mm in width, and 4.83 mm in height, supporting space-constrained designs.
Although not AEC-Q101 automotive certified, this device is optimized for efficiency in applications including power supplies, motor drives, DC-DC converters, and general purpose switching. ROHS compliant, manufactured in China, the IRF3205STRLPBF provides reliable performance from an industry-leading semiconductor brand.
This product is ideal for electrical engineering projects requiring high current and voltage capabilities. Its HEXFET technology reduces power losses and heat generation, increasing system lifespan. Commonly used in industrial automation, consumer electronics, and HVAC control systems.
The TO-263 package allows for enhanced thermal management when paired with suitable heat sinking. Enables design teams to achieve higher power density and efficiency in compact formats. Browse more semiconductor components and Infineon products at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 110 A.
This MOSFET has a maximum drain-source voltage rating of 55 V.
The typical gate charge at Vgs for this unit is 146 nC, enabling fast switching speeds.
The forward voltage drop of this model is 1.3 V, which supports efficient switching.
The dimensions of the TO-263 package are 10.67 mm in length, 9.65 mm in width, and 4.83 mm in height.
The maximum power dissipation for this MOSFET is 200 W, ensuring robust performance.
It can operate reliably across a temperature range from -55°C to 175°C.
The typical on-resistance (Rds(on)) for this model is 8 mΩ, minimizing conduction losses.
The maximum gate-source voltage for this MOSFET is rated at ±20 V.
This model is designed for surface mount applications with a 3-pin configuration.
No, this device is not AEC-Q101 automotive certified, but it is optimized for various power applications.
It is suitable for applications including power supplies, motor drives, DC-DC converters, and general purpose switching.
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