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Infineon HEXFET Type N-Channel MOSFET 161A 30V Enhancement 3-Pin TO-252 IRLR7843TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | IRLR7843TRPBF |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 161A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 140W |
| Typical Gate Charge Qg @ Vgs | 34nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Extremely low on-resistance optimizes power loss and efficiency.
- Supports high continuous drain current for demanding applications.
- Designed to operate at temperatures up to 175°C for reliable performance.
- Lead-free construction supports environmentally responsible design.
- Low gate charge enhances switching efficiency in circuits.
- Surface mount TO-252 package suitable for automated assembly.
- Ideal for high-frequency synchronous buck converters and DC-DC telecom converters.
- Suitable for automotive power management systems and industrial power supplies.
Product Description
Infineon IRLR7843TRPBF HEXFET Type N-Channel MOSFET is engineered for high current and power applications within industrial, automotive, and electronics sectors. Featuring a maximum continuous drain current of 161A and a drain-source voltage rating of 30V, this device excels in power efficiency and reliability using HEXFET technology.
With an extremely low RDS(on) value of 4mΩ, it minimizes conduction losses, improving circuit efficiency especially in high-frequency switching applications. Its TO-252 surface mount package supports automated manufacturing processes, ensuring integration ease.
The MOSFET is designed to operate at elevated temperatures up to 175°C, maintaining performance stability in demanding thermal environments. Its gate charge of 34nC and maximum gate-source voltage of 20V further optimize switching behavior and circuit responsiveness.
This MOSFET is widely used in high-frequency synchronous buck converters and isolated DC-DC converters for telecommunications, as well as for automotive power management and industrial power supplies requiring enhanced efficiency and reliability. It supports pulsed drain currents up to 620A, assuring durability under transient conditions.
Extremely low RDS(on) optimizes power losses and efficiency. High continuous drain current supports demanding applications. High operating temperature rating ensures stable performance. Lead-free design meets environmental regulations.
Low gate charge improves switching in power circuits. Surface mount TO-252 package suitable for automated processes. Ideal for automotive and industrial power management systems. Handles pulsed currents of up to 620A for reliability.
This product is ideal for industrial electronic design, automotive power regulation, and telecommunications power supplies, making it a versatile component for multiple engineering applications. Explore more Infineon semiconductor products and enhance the efficiency of your electronic systems with EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 161A, making it suitable for high current applications.
This N-channel MOSFET has a maximum drain-source voltage rating of 30V.
The maximum drain-source resistance (RDS(on)) is 4mΩ, which helps minimize conduction losses.
It comes in a TO-252 surface mount package, suitable for automated assembly processes.
This model can operate at temperatures up to 175°C, ensuring stable performance in demanding conditions.
The typical gate charge (Qg) at Vgs is 34nC, which enhances switching efficiency in power circuits.
The dimensions of this model are 6.73mm in length, 6.22mm in width, and 2.39mm in height.
The minimum operating temperature for this MOSFET is -55°C, allowing for use in a wide range of environments.
It is ideal for high-frequency synchronous buck converters, DC-DC telecom converters, and automotive power management systems.
The maximum power dissipation for this MOSFET is 140W, which supports its use in high power applications.
The maximum gate-source voltage (Vgs) is 20V, which is important for ensuring proper operation in circuits.
This device features a Type N channel, which is common for enhancement-mode MOSFETs.
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