onsemi PowerTrench Type P-Channel MOSFET 1.25 A 60 V Enhancement 3-Pin SOT-23 FDN5618P

onsemi FDN5618P PowerTrench Type P-Channel MOSFET is a discrete semiconductor device designed for efficient switching and power management in electronic circuits. The device features a maximum continuous drain current of 1.25 A and a maximum drain-source voltage of 60 V, making it suitable for moderate power applications in consumer electronics, industrial control, and power supply designs.

Constructed with the PowerTrench technology, this MOSFET achieves lower on-resistance and improved switching characteristics including a typical gate charge of 8.6 nC which reduces switching losses. The 3-pin SOT-23 package allows for compact surface mount assembly, supporting small form-factor devices and high-density PCB layouts.

The device is rated for operation from -55°C to 150°C, ensuring reliability across a range of industrial and commercial temperature conditions. With a maximum power dissipation of 500 mW and a forward voltage of -1.2 V, it provides efficient conduction and switching capabilities. Its enhancement mode P-channel operation and shielded-gate structure deliver low conduction loss and fast switching suitable for synchronous rectification and other power switching applications.

Typical applications include use in DC-DC converters, power management modules, and electronic load switching. The robust thermal performance and standardized pinout support ease of integration into various electronic designs.

The device features a PowerTrench construction optimized for low on-resistance and power efficiency. Maximum continuous drain current of 1.25 A supports moderate power loads. 3-pin SOT-23 surface mount package facilitates compact PCB design.

Low maximum drain-source resistance of 170 mΩ reduces conduction losses. Temperature range from -55°C to 150°C supports industrial operating conditions. Typical gate charge of 8.6 nC enables fast switching performance. Maximum power dissipation of 500 mW suitable for efficient thermal management.

Enhancement mode P-Channel MOSFET with soft body diode eliminates need for snubber circuits. No specific automotive or certification standards apply.

This onsemi MOSFET FDN5618P is ideal for semiconductor applications requiring efficient power switching in electronics manufacturing, industrial controls, HVAC, and embedded systems. Explore further semiconductor and MOSFET products on EnvMart for your electronics and industrial automation needs.