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Infineon HEXFET Type P-Channel MOSFET 16 A 30 V Enhancement 8-Pin SOIC IRF9317TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.5mm |
| Length | 5mm |
| Model | IRF9317TRPBF |
| Width | 4mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 16A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 10.2mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 61nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.2V |
| P-Channel MOSFET, 16 A, 30 V, 8-Pin SOIC Infineon IRF9317PBFBrand | Infineon |
Key Features
- This MOSFET features an 8-pin SOIC surface mount package suitable for compact electronic designs.
- The device operates with enhancement mode channel type for optimized switching performance.
- It offers a low maximum drain-source resistance (Rds) of 10.2 mΩ to minimize conduction losses.
- Maximum power dissipation is rated at 2.5 W ensuring reliable thermal performance.
- Typical gate charge is 61 nC at Vgs, supporting high-frequency switching applications.
- Designed to operate over a temperature range from -55°C to 150°C, suitable for industrial environments.
- Maximum gate-source voltage rating of ±20 V protects the gate during switching events.
- Compact dimensions of 5 mm length, 4 mm width, and 1.5 mm height allow space-saving PCB layouts.
Product Description
Infineon IRF9317TRPBF is a HEXFET Type P-Channel MOSFET offering a maximum continuous drain current of 16 A and a maximum drain-source voltage of 30 V. Its enhancement mode operation and low Rds(on) of 10.2 mΩ enable high efficiency and reduced power loss in electronic circuits. Packaged in an 8-Pin SOIC surface mount device, it fits well within compact and dense PCB designs.
This MOSFET supports a typical gate charge of 61 nC at the specified gate-source voltage, aiding fast switching and reducing switching losses, important for power management in industrial and automotive applications.
The device reliably functions across a wide temperature range from -55°C up to 150°C, making it suitable for harsh operating environments demanding longevity and performance.
With a maximum power dissipation of 2.5 W and a gate-source voltage rating of ±20 V, the IRF9317TRPBF ensures robustness in demanding applications such as power supplies, motor control, and switching regulators in industrial electronics.
This MOSFET features an 8-pin SOIC surface mount package suitable for compact electronic designs. Enhancement mode P-channel operation provides optimized switching performance. Maximum drain-source resistance of 10.2 mΩ minimizes conduction losses.
Rated for 16 A continuous drain current and 30 V maximum voltage. Operating temperature range from -55°C to 150°C supports harsh industrial environments. Typical gate charge of 61 nC enables efficient high-frequency switching.
Compact dimensions (5 mm × 4 mm × 1.5 mm) ideal for space-constrained designs. Maximum power dissipation of 2.5 W ensures reliable thermal management.
This Infineon MOSFET is a reliable choice for industrial, laboratory, manufacturing, and automotive sectors requiring efficient power switching and control. Explore more power semiconductor devices in the EnvMart Electronics & Electricals categories.
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Frequently Asked Questions
The maximum continuous drain current for this model is rated at 16 A.
This MOSFET has a maximum drain-source voltage rating of 30 V.
The typical gate charge at the specified gate-source voltage is 61 nC.
The maximum power dissipation is rated at 2.5 W, ensuring reliable thermal performance.
The dimensions of this MOSFET are 5 mm in length, 4 mm in width, and 1.5 mm in height.
The maximum gate-source voltage rating for this device is ±20 V.
It operates over a temperature range from -55°C to 150°C, making it suitable for harsh environments.
This model comes in an 8-pin SOIC surface mount package.
The maximum drain-source resistance (Rds) is 10.2 mΩ, which minimizes conduction losses.
This device features an enhancement mode P-channel type channel.
It is suitable for applications such as power supplies, motor control, and switching regulators in industrial electronics.
The country of origin for this MOSFET is India.
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