onsemi PowerTrench Type P-Channel MOSFET 8 A 20 V Enhancement 8-Pin SOIC FDS6375

onsemi FDS6375 PowerTrench Type P-Channel MOSFET is a surface-mount transistor designed to deliver efficient power switching with a maximum continuous drain current of 8 amperes and a drain-source voltage rating of 20 volts. This enhancement mode MOSFET uses advanced PowerTrench technology to optimize system efficiency and power density in electronic circuits.

The device comes in an 8-pin SOIC package type allowing easy integration on printed circuit boards for applications in power management and switching circuits. It combines a low maximum drain-source resistance of 24 milliohms with a typical gate charge of only 26 nanocoulombs, enabling fast switching and reduced power dissipation.

Designed for harsh industrial environments, the FDS6375 operates reliably over a temperature range from -55°C up to 175°C. Its compact dimensions with a length of 5 mm, width of 4 mm, and height of 1.5 mm meet the needs for space-constrained electronic devices.

The PowerTrench MOSFET features a shielded-gate structure that balances charge, significantly improving the figure of merit over previous generations and providing superior performance. The integrated soft body diode reduces the need for additional snubber circuits, simplifying designs while ensuring efficient synchronous rectification especially useful in power supplies.

Common use cases include industrial power switching, electronic component designs in consumer electronics, and embedded systems requiring low voltage and moderate current handling capabilities. The robust thermal and electrical characteristics make it suitable for applications in industrial electronics, automotive control circuits (non-automotive standard), and power management devices.

The device features a maximum continuous drain current of 8 amperes. It has a maximum drain-source voltage rating of 20 volts ensuring reliable operation under specified loads. The MOSFET utilizes PowerTrench series technology optimizing system efficiency and power density.

It supports surface mounting with an 8-pin SOIC package footprint for ease of integration. Maximum drain-source resistance is 24 milliohms minimizing power loss during conduction. The typical gate charge is 26 nanocoulombs, which contributes to fast switching performance.

Operating temperature ranges from -55°C to 175°C, suitable for demanding industrial environments. The device incorporates a shielded-gate structure providing charge balance and improved figure of merit. Forward voltage drop is approximately -1.2 volts with a soft body diode for enhanced efficiency.

Dimensions are compact with length 5 mm, width 4 mm, and height 1.5 mm facilitating space-saving designs. Explore more semiconductor and MOSFET products from onsemi to find suitable components for your industrial, commercial, or electronic design needs on EnvMart.