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DiodesZetex N-Channel MOSFET, 3.1 A Continuous Drain Current, 20 V Drain Source Voltage, Enhancement Mode, 3-Pin DMN2065UW-7
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1mm |
| Length | 2.2mm |
| Model | DMN2065UW-7 |
| Width | 1.35mm |
| Mount Type | Surface |
| Series | DMN |
| Maximum Operating Temperature | 150°C |
| Package Type | SC-70 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 3.1A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 140mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 700mW |
| Typical Gate Charge Qg @ Vgs | 5.4nC |
| Maximum Gate Source Voltage Vgs | 12V |
| Forward Voltage Vf | -1.2V |
Key Features
- Features enhancement mode type N-channel operation for efficient switching.
- Maximum drain-source resistance of 140 milliohms ensures low conduction losses.
- Operates reliably over a temperature range from -55°C to 150°C.
- Typical gate charge is 5.4 nC at Vgs, supporting fast switching applications.
- Maximum power dissipation of 700 mW suitable for low-power electronic devices.
- Automotive standard compliant with AEC-Q101, ensuring reliability in demanding environments.
- Designed for surface mount technology to facilitate automated PCB assembly.
Product Description
The DiodesZetex DMN2065UW-7 is a high-performance N-channel MOSFET designed for reliable switching in low-voltage applications. It supports a continuous drain current of 3.1 A and a maximum drain-source voltage of 20 V, making it ideal for power management and signal amplification in electronic circuits.
This enhancement-mode MOSFET uses a compact 3-pin SC-70 surface-mount package, which allows for efficient use of PCB space and suitability for automated assembly processes. The device exhibits low on-resistance of 140 mΩ, minimizing power loss during conduction.
Operating within a wide temperature range from -55°C to 150°C, it offers robustness required for automotive and industrial applications. Its typical gate charge of 5.4 nC enables fast switching transitions, improving overall circuit performance and efficiency.
With a power dissipation capacity up to 700 mW, the DMN2065UW-7 is well-suited for low to moderate power electronic devices. Compliance with AEC-Q101 automotive standards further ensures its reliability and durability under harsh conditions.
The device features precise dimensions (2.2 mm length, 1.35 mm width, and 1 mm height) optimized to fit modern compact electronic assemblies. It is typically used in industrial, automotive electronics, power supplies, and consumer electronics applications for switching and amplification tasks.
Enhancement mode type N-channel for efficient electronic switching. Surface mount SC-70 package assists in automated PCB assembly. Low drain-source resistance reduces conduction losses and heat generation. Wide operating temperature range suits industrial and automotive sectors.
Fast switching enabled by low gate charge improves circuit speed. Compliance with AEC-Q101 supports automotive electronic safety standards. Compact size integrates easily in space-constrained designs. Suitable for applications in power management and signal amplification.
Explore the DiodesZetex product range and related MOSFET components on EnvMart for industrial and commercial electronics projects.
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Frequently Asked Questions
The maximum continuous drain current for the DMN2065UW-7 is 3.1 A.
It can handle a maximum drain-source voltage of 20 V.
The typical gate charge at Vgs is 5.4 nC.
The maximum power dissipation capacity is 700 mW.
The dimensions are 2.2 mm in length, 1.35 mm in width, and 1 mm in height.
The maximum drain-source resistance is 140 mΩ.
It operates reliably over a temperature range from -55°C to 150°C.
This model uses a SC-70 surface mount package.
Yes, it is compliant with the AEC-Q101 automotive standard.
The channel type is N-channel, designed for enhancement mode operation.
The maximum gate-source voltage is 12 V.
It is suitable for applications in power management and signal amplification in electronic circuits.
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