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DiodesZetex N-Channel Enhancement MOSFET 600 mA 60 V TO-92 Package ZVN4206A

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 4.01mm
Length 4.77mm
Model ZVN4206A
Width 2.41mm
Mount Type Through Hole
Series ZVN4206A
Maximum Operating Temperature 150°C
Package Type TO-92
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101, AEC-Q100, AEC-Q200
Channel Type Type N
Maximum Continuous Drain Current Id 600mA
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 1.5Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 700mW
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.5V

Key Features

  • This MOSFET features a maximum power dissipation of 700 mW suitable for low power switching applications.
  • It operates at a gate-source voltage up to 20 V with a forward voltage drop of 1.5 V.
  • Designed for through-hole mounting, it has a compact package with 4.77 mm length and 2.41 mm width.
  • The device operates in a temperature range from -55°C to 150°C enabling use in harsh environments.
  • It conforms to automotive standards AEC-Q101, AEC-Q100, and AEC-Q200 for enhanced reliability.
  • The MOSFET has a low drain-source on resistance of 1.5 Ω providing efficient conduction.

Product Description

The DiodesZetex ZVN4206A is a robust N-Channel enhancement mode MOSFET designed for semiconductor switching and amplification applications. Packaged in a compact 3-pin TO-92 format, this device supports a continuous drain current of 600 mA and a maximum drain-source voltage of 60 V, making it suitable for low power electronic circuits.

This MOSFET offers a maximum power dissipation rating of 700 mW, ensuring reliable operation under typical load conditions. Its maximum gate-source voltage of 20 V allows for controlled switching with minimal losses, aided by the low forward voltage of 1.5 V. The device's compact dimensions - 4.77 mm length, 2.41 mm width, and 4.01 mm height - make it ideal for through-hole mounting on printed circuit boards in compact devices.

Designed to operate across a wide temperature range from -55°C to 150°C, the ZVN4206A is suitable for use in industrial, automotive, and consumer electronics applications. It meets stringent automotive-grade standards AEC-Q101, AEC-Q100, and AEC-Q200, ensuring reliability and durability in demanding environments.

Applications include power management, signal switching, and amplification in electronic equipment such as automotive electronics, industrial controls, and consumer devices. The device’s low drain-source on resistance of 1.5 Ω aids efficient power handling with reduced heat generation.

Continuous drain current rating of 600 mA for steady operation. Drain-source voltage up to 60 V suitable for moderate voltage applications. Compact TO-92 package for easy through-hole mounting. Wide operating temperature range from -55°C to 150°C for harsh environments.

Conforms to automotive quality standards ensuring enhanced reliability. Low on-resistance of 1.5 Ω improves efficiency and reduces power losses.

The DiodesZetex ZVN4206A is an essential discrete semiconductor component for engineers designing circuits requiring reliable N-channel MOSFET switching. Discover more semiconductor components and MOSFETs in the Electronics & Electricals section at EnvMart.

DiodesZetex N-Channel Enhancement MOSFET 600 mA 60 V TO-92 Package ZVN4206A
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Frequently Asked Questions

The maximum continuous drain current for this model is 600 mA.

It has a maximum drain-source voltage rating of 60 V.

The maximum power dissipation for the ZVN4206A is 700 mW.

The dimensions of the TO-92 package are 4.77 mm in length, 2.41 mm in width, and 4.01 mm in height.

The maximum gate-source voltage for this model is 20 V.

The forward voltage drop is 1.5 V.

It operates within a temperature range of -55°C to 150°C.

This model conforms to automotive standards AEC-Q101, AEC-Q100, and AEC-Q200.

It is designed for through-hole mounting.

The drain-source on-resistance is 1.5 Ω.

This MOSFET utilizes an N-channel type.

It is suitable for applications in power management, signal switching, and amplification in electronic equipment.

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