DiodesZetex P-Channel MOSFET 10.4 A, 60 V Enhancement Surface Mount, 3-Pin TO-252 ZXMP6A18K

DiodesZetex ZXMP6A18K is a high-performance P-Channel MOSFET designed for electronic applications requiring a reliable power transistor with a continuous drain current of 10.4 A and a maximum drain-source voltage of 60 V. It implements an enhancement mode channel and comes in a compact 3-pin TO-252 surface mount package, making it suitable for modern PCB designs in electronic control and power management systems.

This MOSFET provides superior switching characteristics with a typical gate charge of 23 nC at Vgs and a forward voltage of -0.95 V, ensuring efficient power conversion and minimal power losses. Its maximum drain-source resistance is rated at 80 mΩ, contributing to low conduction losses during operation. The power dissipation capacity of 10.1 W enables the device to operate reliably under demanding load conditions.

Its robust operating temperature range from -55°C to 150°C allows deployment in various industrial, automotive, and commercial electronics where thermal stability is critical. The product meets stringent automotive standards including AEC-Q200, AEC-Q104, AEC-Q100, and AEC-Q101, attesting to its quality and reliability for automotive electronic circuits and systems.

The compact dimensions of 7.67 mm in width, 6.73 mm in length, and 2.39 mm in height facilitate space-saving designs in dense circuit boards. With a maximum gate-source voltage of 20 V, the transistor is suitable for low-voltage control circuit environments.

DiodesZetex ZXMP6A18K MOSFET is ideal for use in power switching, power amplifiers, load drivers, and automotive electronic control systems. Its high current handling capacity and low resistance make it efficient for DC-DC converters, motor drivers, and power management modules in industrial, automotive, and consumer electronic devices.

The product's country of origin is China. Package contents typically include a single MOSFET transistor in the specified TO-252 form factor. This semiconductor component is engineered for durability, performance, and efficient power handling in a wide range of electronic applications.

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This MOSFET features a 3-pin surface mount TO-252 package for efficient PCB integration. The device operates with an enhancement mode channel and has a maximum drain-source resistance of 80 mΩ. It supports a maximum power dissipation of 10.1 W and a maximum gate-source voltage of 20 V.

The MOSFET has a typical gate charge of 23 nC at Vgs, ensuring efficient switching performance. Operating temperature ranges from -55°C minimum to 150°C maximum, suitable for harsh environments. Physical dimensions are 7.67 mm width, 6.73 mm length, and 2.39 mm height.

The transistor is compliant with automotive standards AEC-Q200, AEC-Q104, AEC-Q100, and AEC-Q101. Designed primarily for power and discrete semiconductor applications requiring reliable and robust switching.