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Nexperia N-Channel Enhancement MOSFET, 100 A, 40 V, 4-Pin SOT-669 PSMN2R6-40YS,115
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 1.1mm |
| Length | 5mm |
| Model | PSMN2R6-40YS,115 |
| Width | 4.1mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-669 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 3.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 131W |
| Typical Gate Charge Qg @ Vgs | 63nC |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Supports maximum continuous drain current of 100 amperes for high power applications.
- Maximum drain-source voltage rating of 40 volts ensures robust performance.
- Low on-resistance of 3.7 milliohms minimizes power loss and heat generation.
- Enhancement mode operation suitable for efficient switching.
- Typical gate charge of 63 nanocoulombs enables fast switching speeds.
- Can dissipate up to 131 watts of power for demanding industrial use.
- Wide operational temperature range from -55°C to 175°C allows use in harsh environments.
- Surface mount type package allows easy integration on modern PCB layouts.
Product Description
Nexperia PSMN2R6-40YS,115 is a high-performance N-Channel Enhancement MOSFET designed for industrial and electronic applications requiring high current capability and efficient switching. Operating at a maximum continuous drain current of 100 A and a drain-source voltage of 40 V, this device is suitable for power management in various circuits.
The transistor's low on-resistance (3.7 mΩ) reduces conduction losses and improves energy efficiency, making it ideal for power converters and motor control. It features a typical gate charge of 63 nC at gate-source voltage, enabling fast switching and improved performance in PWM controls.
Encased in a compact SOT-669 4-pin surface mount package with dimensions of 5 mm by 4.1 mm by 1.1 mm, it allows high-density PCB designs. The MOSFET supports a wide operational temperature range from -55°C up to 175°C, ensuring reliable operation in demanding industrial environments, automotive electronics, and telecommunications equipment.
Supports maximum continuous drain current of 100 amperes for high power applications. Maximum drain-source voltage rating of 40 volts ensures robust performance. Low on-resistance of 3.7 milliohms minimizes power loss and heat generation.
Enhancement mode operation suitable for efficient switching. Typical gate charge of 63 nanocoulombs enables fast switching speeds. Can dissipate up to 131 watts of power for demanding industrial use. Wide operating temperature range from -55°C to 175°C allowing use in harsh environments.
Compact surface mount 4-pin SOT-669 package design.
This MOSFET is well-suited for power supply regulation, motor drivers, and industrial electronic circuits where high current and efficiency are critical. The device complies with standard electronic component design principles and does not carry specific certifications.
Explore further suitable semiconductor components and MOSFETs in the Electronics & Electricals category on EnvMart for your industrial and engineering needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 100 A, making it suitable for high power applications.
This MOSFET has a maximum drain-source voltage rating of 40 V, ensuring robust performance in various applications.
The on-resistance of this model is 3.7 milliohms, which helps minimize power loss and heat generation during operation.
The typical gate charge is 63 nanocoulombs, allowing for fast switching speeds in applications.
This model can dissipate up to 131 watts of power, making it suitable for demanding industrial use.
The operational temperature range is from -55°C to 175°C, allowing for use in harsh environments.
It comes in a compact SOT-669 4-pin surface mount package, facilitating easy integration into modern PCB layouts.
The enhancement mode operation allows for efficient switching, which is critical for power management applications.
The dimensions of this model are 5 mm in length, 4.1 mm in width, and 1.1 mm in height.
The maximum gate-source voltage for this MOSFET is 20 V, which is important for ensuring proper operation.
This N-channel MOSFET is suitable for applications such as power supply regulation, motor drivers, and industrial electronic circuits.
This MOSFET features a pin count of 4, which corresponds to its SOT-669 package design.
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