Vishay N-Channel MOSFET 2.7 A 60 V Enhancement Mode 4-Pin SOT-223 IRFL014TRPBF

Vishay IRFL014TRPBF is a type N-channel enhancement mode MOSFET designed for high efficiency switching applications requiring a maximum continuous drain current of 2.7 amperes and drain-source voltage of 60 volts. Packaged in a compact 4-pin SOT-223 surface mount package measuring 6.7 mm in length, 3.7 mm in width, and 1.8 mm in height, this component suits applications where space-saving is critical.

The device features a low gate charge of 11 nC at Vgs of 11 V, supporting rapid switching times for power management in industrial controls, power supplies, motor drives, and consumer electronics. It maintains stability and performance across a wide operating temperature range from -55°C up to 150°C, which makes it suitable for harsh industrial and automotive environments.

Its low RDS(on) of 200 milliohms reduces on-state power loss, improving energy efficiency and thermal management. The maximum power dissipation of 3.1 W allows the MOSFET to handle typical loads effectively without excess heat generation.

The maximum gate-source voltage of 20 V protects the gate oxide from damage during transient conditions. Its forward voltage of 1.6 V supports efficient conduction required in switching operations.

This MOSFET is ideal for use in electronic circuits including power regulators, DC-DC converters, load switches, and signal processing. It is compliant with industry standards and designed by Vishay Semiconductor, a trusted brand in power MOSFET technology.

This MOSFET operates in enhancement mode for switching and amplification applications. Maximum continuous drain current rated at 2.7 A ensures reliable performance. Maximum voltage rating of 60 V allows use in low to medium voltage circuits.

Low gate charge of 11 nC improves switching efficiency and speed. Compact SOT-223 package with dimensions 6.7mm length, 3.7mm width, and 1.8mm height enables space-efficient PCB layout. Maximum power dissipation of 3.1 W allows sustained operation under typical loads.

Wide operating temperature range from -55°C to 150°C ensures durability in harsh conditions. RDS(on) resistance of 200 mΩ at maximum rating minimizes losses. Forward voltage of 1.6 V supports efficient conduction characteristics.

Maximum gate-source voltage of 20 V offers protection against overvoltage on the gate terminal.

Available for industrial, electronic manufacturing, automotive, and commercial HVAC applications where precise power control is required. Explore more Vishay semiconductor products within the EnvMart platform for reliable component sourcing.