onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 3 A, 20 V, 6-Pin SOT-23 FDC6401N

onsemi FDC6401N Isolated PowerTrench 2 Type N-Channel MOSFET is engineered to deliver efficient switching performance with a maximum continuous drain current of 3 A and a maximum drain source voltage of 20 V. Its compact 6-pin SOT-23 surface mount package measures 3 mm in length, 1.7 mm in width, and 1 mm in height, making it suited for space-constrained electronic designs.

The device features a low typical gate charge of 3.3 nC at Vgs, reducing switching losses and enhancing system efficiency. With a maximum drain source resistance of 106 mΩ, it minimizes conduction losses, critical for power-sensitive applications.

Rated for operation between -55°C to 150°C and a power dissipation capability of 960 mW, the MOSFET ensures robust performance in demanding environments. The isolated transistor configuration with 2 elements per chip provides improved control and integration in circuit designs.

This enhancement mode Type N channel MOSFET includes a maximum gate source voltage of 12 V and a forward voltage of 1.7 V, making it suitable for a wide range of power management and switching tasks. The PowerTrench® technology offers soft body diode characteristics, eliminating the need for snubber circuits and enabling faster switching in synchronous rectification.

Applications include AC/DC power supplies, industrial control, telecommunications, computing, and automotive electronics where efficiency and compact form factor are crucial. Low gate charge ensures fast switching and low loss.

High temperature operation range suits industrial and automotive use. Isolated dual-element transistor configuration enhances reliability. Compact SOT-23 package for space-saving PCB layouts. Soft body diode performance reduces the need for additional components.

EnvMart customers can rely on the onsemi FDC6401N MOSFET for high efficiency, compactness, and durability in professional electronic component applications.