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onsemi High Current NTMFS Type N-Channel Power MOSFET 365 A, 25 V, 8-Pin DFN NTMFS0D8N02P1ET1G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 6.3mm |
| Length | 5.3mm |
| Model | NTMFS0D8N02P1ET1G |
| Width | 1.1mm |
| Mount Type | Surface |
| Series | NTMFS |
| Maximum Operating Temperature | 175°C |
| Package Type | DFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 365A |
| Maximum Drain Source Voltage Vds | 25V |
| Maximum Drain Source Resistance Rds | 0.68mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 139W |
| Typical Gate Charge Qg @ Vgs | 52nC |
| Maximum Gate Source Voltage Vgs | 16V |
Key Features
- High continuous drain current rating of 365 Amperes.
- Drain-source voltage rating of 25 Volts suitable for power applications.
- Low drain-source resistance of 0.68 milliohms for efficient conduction.
- Compact 8-pin DFN surface-mount package for space-saving designs.
- Supports enhancement mode operation for efficient switching.
- Maximum power dissipation of 139 Watts for robust thermal handling.
- Operates over a wide temperature range from -55°C to 175°C.
- Typical gate charge of 52 nC enabling fast switching speeds.
Product Description
onsemi NTMFS0D8N02P1ET1G is a high-performance N-Channel Power MOSFET designed for demanding electronic applications requiring high current and efficient switching. It features a maximum continuous drain current of 365 A and a maximum drain-source voltage of 25 V, making it suitable for power load switching, DC/DC converters, and battery management in notebook computers.
The device utilizes an enhancement channel mode with a low drain-source resistance of 0.68 milliohms, minimizing conduction losses and improving efficiency. Housed in a compact 8-pin DFN surface-mount package, it supports space-constrained PCB layouts while providing robust electrical performance.
Thermal management is enhanced with a maximum power dissipation capability of 139 Watts and operational temperature range spanning from -55°C to 175°C, ensuring reliable performance in harsh industrial and commercial environments.
With a typical gate charge of 52 nC at a gate-source voltage of 5 V, the MOSFET enables fast switching suitable for high-frequency power conversion. Its maximum gate-source voltage is rated at 16 V for device safety.
High continuous drain current of 365 A. Low on resistance of 0.68 mΩ for efficient conduction. Compact 8-pin DFN surface mount package. Wide operating temperature range from -55°C to 175°C. Maximum power dissipation of 139 W.
Typical gate charge of 52 nC supports fast switching. Suitable for DC/DC converters and notebook battery management. Enhancement mode channel operation for efficient power control. Small device dimensions enable compact designs.
Pb-free and RoHS compliant for environmental safety.
This NTMFS MOSFET is optimized for industrial, power electronics, and computing applications including power load switches, DC/DC converters, and battery management systems. Its robust specs and compact package make it an ideal semiconductor choice for modern electronic designs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 365 Amperes.
This MOSFET has a maximum drain-source voltage rating of 25 Volts.
The device features a low drain-source resistance of 0.68 milliohms, which enhances conduction efficiency.
It comes in a compact 8-pin DFN surface-mount package, suitable for space-constrained designs.
The operating temperature range spans from -55°C to 175°C, allowing for reliable performance in various environments.
This model can handle a maximum power dissipation of 139 Watts, ensuring robust thermal management.
The typical gate charge is 52 nC at a gate-source voltage of 5 V, facilitating fast switching speeds.
The maximum gate-source voltage is rated at 16 Volts for device safety.
It utilizes an enhancement mode channel, which is efficient for power control applications.
The dimensions are 6.3 mm in height, 5.3 mm in length, and 1.1 mm in width.
This model is optimized for power load switching, DC/DC converters, and battery management systems in electronic applications.
The country of origin for this MOSFET is India.
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