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Nexperia N-Channel Enhancement Mode MOSFET, 10.3 A, 25 V, Surface Mount MLPAK33 8-Pin PXN7R7-25QLJ

Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Model PXN7R7-25QLJ
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type MLPAK33
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type Type N
Maximum Continuous Drain Current Id 10.3A
Maximum Drain Source Voltage Vds 25V
Maximum Drain Source Resistance Rds 13.6mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 12.5W
Maximum Gate Source Voltage Vgs 20V

Key Features

  • Utilizes Trench MOSFET technology with low gate charge for high efficiency.
  • Surface mount MLPAK33 package with 8 pins for compact PCB footprint.
  • Enhancement mode channel suitable for switching applications.
  • Capable of dissipating up to 12.5 watts of power.
  • Operates safely within a temperature range of -55°C to 150°C.
  • Maximum gate-source voltage rating of 20 V ensures reliable operation.
  • Superfast switching with soft recovery reduces electromagnetic interference.
  • Ideal for industrial and electronic power switching circuits.

Product Description

Nexperia PXN7R7-25QLJ is an N-channel enhancement mode MOSFET designed using advanced Trench MOSFET technology, packaged in an 8-pin MLPAK33 surface-mounted plastic case. It supports a maximum continuous drain current of 10.3 amps and a drain-source voltage of 25 volts, making it suitable for efficient power switching tasks in compact electronic devices.

This MOSFET features ultra-low gate charge (QG) and gate-drain charge (QGD) which enhances high-frequency switching efficiencies and minimizes power losses. The device provides superfast switching capabilities with soft recovery, resulting in low spiking, reduced ringing, and minimized electromagnetic interference (EMI) in electronic circuits.

The MLPAK33 package measures 3.3 by 3.3 mm, enabling dense PCB layouts and ease of assembly in automated manufacturing environments. It is rated to dissipate a maximum power of 12.5 watts, making it reliable for thermal management in various applications.

With an operating temperature range from a minimum of -55 degrees Celsius to a maximum of 150 degrees Celsius, this MOSFET is suited for harsh industrial and commercial conditions. The maximum gate-source voltage is rated at 20 volts to ensure safe and robust operation within circuit designs.

Typical use cases for the PXN7R7-25QLJ include electronic power control modules, industrial automation, motor drivers, power supplies, and consumer electronics requiring high efficiency and reliable switching performance.

Utilizes Trench MOSFET technology with ultra-low gate charge for efficient switching. Compact MLPAK33 surface mount 8-pin package for space-saving designs. Supports continuous drain current up to 10.3 A and voltage rating of 25 V.

Enhancement mode channel ensuring excellent control and switching precision. Wide operating temperature range from -55°C to 150°C for versatile industrial applications. Power dissipation rating of 12.5 W for reliable thermal performance.

Superfast switching characteristics with low EMI emissions. Suitable for industrial, electronic, and power management environments. Explore more semiconductor and MOSFET solutions in the Electronics & Electricals category at EnvMart for your precision industrial applications.

Nexperia N-Channel Enhancement Mode MOSFET, 10.3 A, 25 V, Surface Mount MLPAK33 8-Pin PXN7R7-25QLJ
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Frequently Asked Questions

The maximum continuous drain current for this model is 10.3 A.

The maximum drain-source voltage rating is 25 V.

It is rated for a maximum power dissipation of 12.5 W.

The operating temperature range is from -55°C to 150°C.

This MOSFET is packaged in an 8-pin MLPAK33 surface mount package.

The maximum gate-source voltage is rated at 20 V.

It features an N-channel type configuration.

It has an ultra-low gate charge, which enhances high-frequency switching efficiencies and minimizes power losses.

This model is suitable for electronic power control modules, industrial automation, motor drivers, and power supplies.

The maximum drain-source resistance is 13.6 mΩ.

Trench MOSFET technology provides low gate charge for high efficiency and superfast switching capabilities, reducing electromagnetic interference.

The MLPAK33 package has a pin count of 8.

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