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onsemi Small Signal NPN Transistor 100 mA 45 V 3-Pin SOT-23 BC847CLT3G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.11mm
Length 3.04mm
Model BC847CLT3G
Width 1.4mm
Mount Type Surface
Series BC847CL
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 110
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 50V dc
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 225mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Maximum collector current is 100 mA, suitable for low power switching applications.
  • Collector-emitter voltage rating of 45 V ensures high voltage tolerance.
  • Compact 3-pin SOT-23 surface mount package enables space-saving PCB designs.
  • NPN transistor configuration with a minimum DC current gain of 110.
  • Supports operating temperatures from -55°C to 150°C, allowing for reliable performance in harsh conditions.
  • Transition frequency up to 100 MHz for high-speed switching applications.
  • Maximum power dissipation is 225 mW, fitting for small signal applications.
  • Automotive qualified to AEC-Q101 standard, meeting industry reliability requirements.

Product Description

onsemi BC847CLT3G is a small signal NPN transistor designed for electronic switching and amplification applications. It supports a maximum DC collector current of 100 mA and a collector-emitter voltage up to 45 V. Packaged in a compact 3-pin SOT-23 case, it enables efficient surface mounting on printed circuit boards with limited space.

This transistor features a minimum DC current gain of 110, making it capable of amplifying low-level signals effectively. Its high transition frequency of 100 MHz allows operation in high-speed switching circuits within industrial, automotive, and electronic device applications. The device can reliably operate across a wide temperature range from -55°C to 150°C, suitable for harsh environments.

With a maximum power dissipation of 225 mW, the BC847CLT3G is ideal for small signal processing tasks. The transistor’s pin configuration facilitates straightforward integration into various semiconductor circuits. It is automotive qualified under the AEC-Q101 standard, ensuring compliance with strict quality and reliability requirements for automotive electronics.

Maximum collector current of 100 mA for switching and amplification. Collector-emitter voltage rating of 45 V for voltage endurance. Compact 3-pin SOT-23 surface mount package for space-saving design. Minimum DC current gain of 110 for efficient signal amplification.

Wide operating temperature range from -55°C to 150°C for harsh conditions. Maximum transition frequency of 100 MHz suitable for high-speed circuits. Maximum power dissipation of 225 mW ensuring safe operation. Automotive standard compliance with AEC-Q101 certification for reliable automotive use.

This transistor is widely used in industrial electronics, automotive controls, communication devices, and general-purpose amplification circuits. It enables efficient, reliable operation in environments demanding small signal control and switching.

Explore more semiconductor components and Bipolar Transistors at EnvMart to enhance your electronic designs with reliable and industry-standard parts.

onsemi Small Signal NPN Transistor 100 mA 45 V 3-Pin SOT-23 BC847CLT3G
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Frequently Asked Questions

The maximum collector current for the BC847CLT3G is 100 mA, making it suitable for low power switching applications.

This model has a collector-emitter voltage rating of 45 V, ensuring it can handle high voltage applications.

The transistor is packaged in a compact 3-pin SOT-23 surface mount package, allowing for space-saving designs on PCBs.

It operates reliably across a wide temperature range from -55°C to 150°C, suitable for harsh conditions.

The minimum DC current gain (hFE) for the BC847CLT3G is 110, which aids in efficient signal amplification.

The maximum power dissipation for this transistor is 225 mW, which is appropriate for small signal applications.

This transistor has a maximum transition frequency of 100 MHz, making it suitable for high-speed switching applications.

The BC847CLT3G is automotive qualified to the AEC-Q101 standard, ensuring it meets industry reliability requirements.

The dimensions of this transistor are 3.04 mm in length, 1.4 mm in width, and 1.11 mm in height.

The maximum emitter-base voltage (VEBO) for the BC847CLT3G is 6 V.

This model features a single NPN transistor configuration, suitable for various electronic applications.

The maximum collector-base voltage (VCBO) for this transistor is 50 V DC.

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