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onsemi Transistor 15 A NPN, 250 V dc, 200 W TO-3P Through Hole NJW3281G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin Korea
Brand onsemi
Height 20.1mm
Length 15.8mm
Model NJW3281G
Width 5mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type TO-3P
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 250V dc
Minimum DC Current Gain hFE 45
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 250V dc
Maximum Power Dissipation Pd 200W
Maximum DC Collector Current Idc 15A
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz

Key Features

  • High maximum collector current of 15 amperes ensures robust performance.
  • Maximum collector-emitter voltage rating of 250 volts dc suits demanding circuits.
  • Through hole mount type with TO-3P package enables easy PCB mounting.
  • Minimum DC current gain (hFE) of 45 provides reliable amplification.
  • Operates in a wide temperature range from -65°C to 150°C.
  • Maximum power dissipation capacity of 200 watts supports heavy loads.
  • Maximum transition frequency of 1 MHz suitable for high frequency applications.
  • Polarity is NPN, compatible with standard transistor circuits.

Product Description

onsemi NJW3281G Transistor is a high-power NPN bipolar transistor designed for industrial and electronic applications requiring high current and voltage performance. Featuring a maximum collector current of 15 A and a collector-emitter voltage rating of 250 V dc, this transistor is housed in a TO-3P package that facilitates through-hole mounting on printed circuit boards.

This transistor is engineered for robust operation across a broad temperature range from -65°C to 150°C, making it suitable for harsh industrial environments. The device supports a maximum power dissipation of 200 W, enabling use in power amplification and switching applications.

The NJW3281G offers a minimum DC current gain (hFE) of 45 and a maximum transition frequency of 1 MHz, ensuring reliable performance in high-frequency circuits. Its NPN polarity is compatible with a wide range of electronic designs.

With compact physical dimensions - 20.1 mm height, 15.8 mm length, and 5 mm width - this transistor integrates efficiently in dense circuitry. It is manufactured in Korea, Republic Of, ensuring adherence to quality standards.

High maximum collector current of 15 amperes ensures robust performance. Maximum collector-emitter voltage rating of 250 volts dc suits demanding circuits. Through hole mount type with TO-3P package enables easy PCB mounting.

Minimum DC current gain (hFE) of 45 provides reliable amplification. Operates in a wide temperature range from -65°C to 150°C. Maximum power dissipation capacity of 200 watts supports heavy loads. Maximum transition frequency of 1 MHz suitable for high frequency applications.

Polarity is NPN, compatible with standard transistor circuits. Compact dimensions: 20.1 mm height, 15.8 mm length, and 5 mm width. Manufactured in Korea, Republic Of ensuring quality and reliability.

This transistor is ideal for industrial power control, high power amplification, and electronic equipment requiring reliable high current switching. It is widely used in power supply designs, motor control, and inverter circuits.

Explore more high-performance semiconductor components in the onsemi range and browse the Electronics & Electricals category for complementary products that suit your engineering and manufacturing needs.

Explore more products in our Bipolar Transistors category.

onsemi Transistor 15 A NPN, 250 V dc, 200 W TO-3P Through Hole NJW3281G
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Frequently Asked Questions

The maximum collector current of the NJW3281G transistor is 15 A.

The collector-emitter voltage rating for the NJW3281G is 250 V dc.

This transistor has a maximum power dissipation capacity of 200 W.

The minimum DC current gain (hFE) of the NJW3281G is 45.

The NJW3281G operates within a temperature range of -65°C to 150°C.

The NJW3281G is housed in a TO-3P package type, which is suitable for through-hole mounting.

The physical dimensions of the NJW3281G are 20.1 mm in height, 15.8 mm in length, and 5 mm in width.

The maximum transition frequency of this model is 1 MHz.

The NJW3281G is an NPN bipolar transistor.

The NJW3281G has a pin count of 3.

The maximum emitter-base voltage (VEBO) for the NJW3281G is 5 V.

The NJW3281G is manufactured in the Republic of Korea.

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