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| Country of Origin | Korea |
|---|---|
| Brand | onsemi |
| Height | 20.1mm |
| Length | 15.8mm |
| Model | NJW3281G |
| Width | 5mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-3P |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 250V dc |
| Minimum DC Current Gain hFE | 45 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 250V dc |
| Maximum Power Dissipation Pd | 200W |
| Maximum DC Collector Current Idc | 15A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
onsemi NJW3281G Transistor is a high-power NPN bipolar transistor designed for industrial and electronic applications requiring high current and voltage performance. Featuring a maximum collector current of 15 A and a collector-emitter voltage rating of 250 V dc, this transistor is housed in a TO-3P package that facilitates through-hole mounting on printed circuit boards.
This transistor is engineered for robust operation across a broad temperature range from -65°C to 150°C, making it suitable for harsh industrial environments. The device supports a maximum power dissipation of 200 W, enabling use in power amplification and switching applications.
The NJW3281G offers a minimum DC current gain (hFE) of 45 and a maximum transition frequency of 1 MHz, ensuring reliable performance in high-frequency circuits. Its NPN polarity is compatible with a wide range of electronic designs.
With compact physical dimensions - 20.1 mm height, 15.8 mm length, and 5 mm width - this transistor integrates efficiently in dense circuitry. It is manufactured in Korea, Republic Of, ensuring adherence to quality standards.
High maximum collector current of 15 amperes ensures robust performance. Maximum collector-emitter voltage rating of 250 volts dc suits demanding circuits. Through hole mount type with TO-3P package enables easy PCB mounting.
Minimum DC current gain (hFE) of 45 provides reliable amplification. Operates in a wide temperature range from -65°C to 150°C. Maximum power dissipation capacity of 200 watts supports heavy loads. Maximum transition frequency of 1 MHz suitable for high frequency applications.
Polarity is NPN, compatible with standard transistor circuits. Compact dimensions: 20.1 mm height, 15.8 mm length, and 5 mm width. Manufactured in Korea, Republic Of ensuring quality and reliability.
This transistor is ideal for industrial power control, high power amplification, and electronic equipment requiring reliable high current switching. It is widely used in power supply designs, motor control, and inverter circuits.
Explore more high-performance semiconductor components in the onsemi range and browse the Electronics & Electricals category for complementary products that suit your engineering and manufacturing needs.
Explore more products in our Bipolar Transistors category.
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