Infineon HEXFET Type N-Channel MOSFET 170 A 80 V Enhancement 3-Pin TO-247 IRFP2907ZPBF

Infineon IRFP2907ZPBF is a HEXFET Type N-Channel MOSFET designed for demanding industrial and electronic applications requiring high current handling capability and voltage endurance. It supports maximum continuous drain current up to 170 A and maximum drain-source voltage of 80 V, making it suitable for power conversion and motor control systems.

This 3-pin TO-247 MOSFET package ensures ease of assembly in through-hole printed circuit boards, supporting effective heat dissipation with a maximum power rating of 310 W. The device's low drain-source resistance of 5 mΩ minimizes conduction losses, contributing to improved energy efficiency in power electronics.

The enhancement mode channel operates stably within a temperature range from -55°C to 175°C, suitable for harsh industrial environments. Typical gate charge of 180 nC at gate-source voltage values enables faster switching speeds and higher efficiency in switching applications.

Additional device specifications include a gate-source maximum voltage rating of 20 V and a forward voltage of 1.3 V, supporting robust switching performance. The MOSFET lacks automotive standards certification, indicating its design focus is on industrial electronics, laboratory circuits, and manufacturing equipment rather than automotive use.

Its compact size (15.9 mm length, 5.3 mm width, 20.3 mm height) allows integration into dense circuit layouts. Applications span industrial power supplies, inverters, motor drives, and power amplifiers where high current and voltage control are critical. This component supports efficient design and reliable operation in commercial and manufacturing sectors.

Infineon's reputation for quality ensures consistent performance and durability in power semiconductor solutions. Choose the IRFP2907ZPBF HEXFET MOSFET to meet stringent industrial requirements for power electronic assemblies.

This MOSFET features an enhancement mode channel and a 3-pin TO-247 package type. Maximum power dissipation of 310 W supports high-performance applications. Low maximum drain source resistance of 5 milliohms reduces conduction losses.

Operates reliably between -55°C minimum and 175°C maximum temperatures. Typical gate charge is 180 nanocoulombs at Vgs, offering efficient switching. Maximum gate source voltage is rated at 20 V for safe operation. Compact dimensions with length 15.9 mm, width 5.3 mm, and height 20.3 mm.

Designed for through-hole mount suitable for various industrial circuit boards. No automotive standard certification; intended for general industrial and electronic use. Forward voltage of 1.3 V ensures efficient conduction characteristics.

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