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onsemi PowerTrench Type N-Channel MOSFET 15 A 30 V Enhancement 8-Pin SOIC FDS8896

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onsemi PowerTrench Type N-Channel MOSFET 15 A 30 V Enhancement 8-Pin SOIC FDS8896

Name: onsemi PowerTrench Type N-Channel MOSFET 15 A 30 V Enhancement 8-Pin SOIC FDS8896
Brand: onsemi
SKU: 101099

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.5mm
Length	5mm
Model	FDS8896
Width	4mm
Mount Type	Surface
Series	PowerTrench
Maximum Operating Temperature	150°C
Package Type	SOIC
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	Type N
Maximum Continuous Drain Current Id	15A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	6mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	2.5W
Typical Gate Charge Qg @ Vgs	50nC
Maximum Gate Source Voltage Vgs	20V

Key Features

Type N channel enhances device efficiency and switching performance.
Maximum continuous drain current is rated at 15 A.
Maximum drain-source voltage rating is 30 V.
8-pin SOIC package ensures compact and reliable mounting.
Maximum power dissipation is 2.5 W for thermal management.
Operating temperature range from -55°C to 150°C supports varied industrial applications.
Typical gate charge of 50 nC enables fast switching.
Channel resistance as low as 6 mΩ minimizes conduction losses.

Product Description

onsemi FDS8896 is a PowerTrench Type N-Channel Enhancement Mode MOSFET designed for reliable performance in various industrial applications. This surface mounting device supports a maximum continuous drain current of 15 A and a drain-source voltage of 30 V, making it suitable for power management circuits and switching applications.

The device comes in an 8-pin SOIC package with compact dimensions of 5 mm length, 4 mm width, and 1.5 mm height, optimizing PCB space. It features a low maximum drain-source resistance of 6 mΩ which reduces conduction losses and improves efficiency.

Its maximum power dissipation of 2.5 W allows for effective heat handling in moderate power circuits. Operating temperature spans from -55°C to 150°C, assuring stable function in harsh environments.

The typical gate charge of 50 nC and maximum gate-source voltage of 20 V facilitate fast switching with robust gate drive margins. This enhancement mode MOSFET is targeted for applications in industrial power control, motor drivers, DC-DC converters, and automotive electronics where high reliability and efficiency are critical.

Type N channel enhances device switching speed and efficiency. Maximum continuous drain current of 15 A supports moderate power loads. Surface mount 8-pin SOIC package for compact assembly. Low on-resistance of 6 mΩ reduces conduction losses.

Wide operating temperature range from -55°C to 150°C ensures durable performance. Typical gate charge of 50 nC enables quick switching operations. Maximum gate-source voltage rating of 20 V provides gate protection. Maximum power dissipation of 2.5 W to maintain thermal stability.

Compact dimensions improve PCB design flexibility. Suitable for industrial, power electronics, and automotive applications.

This MOSFET is part of onsemi’s PowerTrench series known for robustness and efficiency in power semiconductor components. It is ideal for use in industrial electronics, manufacturing control systems, HVAC equipment, and other commercial electronic devices.

Explore more semiconductor and power device options in the Electronics & Electricals category at EnvMart for all your industrial component needs.