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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1mm |
| Length | 3mm |
| Model | FDC5614P |
| Width | 1.7mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 3A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 105mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.6W |
| Typical Gate Charge Qg @ Vgs | 15nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.2V |
onsemi FDC5614P is a PowerTrench Type P-Channel MOSFET designed for electronic and power applications requiring efficient switching and low losses. Its maximum continuous drain current of 3 A and drain source voltage rating of 60 V make it suitable for DC/DC converters, power management, and switching circuits in industrial and consumer electronics.
The device uses a shielded-gate structure providing charge balance that significantly lowers the figure of merit (FOM), enhancing system efficiency and power density. With a low gate charge of 15 nC, the transistor allows high-speed switching and improves synchronous rectification performance.
The 6-pin SOT-23 surface mount package offers a compact footprint with precise dimensions of 3 mm length, 1.7 mm width, and 1 mm height, facilitating integration into space-constrained PCB layouts.
Operating temperature ranges from a minimum of -55°C to 150°C, enabling reliable performance across harsh industrial environments. The soft reverse recovery body diode feature reduces the need for additional snubber circuits, simplifying design complexity.
Electrical characteristics include a maximum drain-source resistance of 105 mΩ, forward voltage of -1.2 V, and maximum power dissipation of 1.6 W, ensuring durable and efficient operation.
This PowerTrench MOSFET series is ideal for use in industrial power management, consumer electronics, telecommunications, and automotive power switching where reliability and thermal performance are paramount.
Features low gate charge of 15 nC for efficient switching. Maximum power dissipation rated at 1.6 W for robust performance. Designed with a shielded-gate structure for enhanced charge balance. Supports a wide operating temperature range from -55°C to 150°C.
Provides low drain-source resistance of 105 mΩ for minimal conduction losses. Includes a soft reverse recovery body diode enabling fast switching. Compact dimensions of 3 mm length, 1.7 mm width, and 1 mm height suitable for surface mount applications.
Operates under enhancement mode with a forward voltage of -1.2 V. Explore the broad range of onsemi MOSFETs and semiconductor solutions on EnvMart for your industrial, commercial, and laboratory power electronics needs.
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