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onsemi PowerTrench Dual N/P-Channel Isolated MOSFET, 20 V, 3.7 A, 6-Pin MLP FDMA1032CZ

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 0.75mm
Length 2mm
Model FDMA1032CZ
Width 2mm
Mount Type Surface
Series PowerTrench
Maximum Operating Temperature 150°C
Package Type MLP
Minimum Operating Temperature -55°C
Pin Count 6
Number of Elements per Chip 2
Channel Type Type P, Type N
Maximum Continuous Drain Current Id 3.7A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 95mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.4W
Typical Gate Charge Qg @ Vgs 4nC
Maximum Gate Source Voltage Vgs 12V
Forward Voltage Vf 0.7V
Transistor Configuration Isolated

Key Features

  • This MOSFET features a low maximum drain-source resistance of 95 milliohms for energy efficiency.
  • The device is housed in a compact 6-pin MLP package measuring 2mm x 2mm x 0.75mm.
  • It operates in enhancement mode with isolated transistor configuration for stable performance.
  • Designed to tolerate temperatures from -55°C to 150°C, ensuring reliability in industrial environments.
  • Boasts a typical gate charge of 4 nC and a maximum gate-source voltage of 12 V for fast switching.
  • Its soft reverse recovery body diode allows elimination of snubber circuits in synchronous rectification.
  • The product contains 2 elements per chip, enabling versatile circuit design.

Product Description

onsemi FDMA1032CZ is a PowerTrench® Dual N/P-Channel Isolated MOSFET designed for efficient power switching applications. It delivers a maximum continuous drain current of 3.7 A and a maximum drain-source voltage of 20 V, suitable for medium power circuits.

This device is housed in a 6-pin MLP surface mount package with dimensions of 2 mm length, 2 mm width, and 0.75 mm height, allowing compact PCB layouts. The enhancement mode transistor configuration ensures precise control over switching operations.

Operating temperature range spans from -55°C to 150°C, making this MOSFET ideal for demanding industrial, automotive, and consumer electronics applications. It features a very low maximum drain-source resistance of 95 milliohms, enhancing system efficiency by reducing conduction losses.

Low maximum drain-source resistance of 95 mΩ for reduced power loss. High temperature tolerance from -55°C to 150°C ensures durable operation. Compact 6-pin MLP package suitable for space-constrained designs. Soft reverse recovery body diode reduces electromagnetic interference and snubber needs.

Typical gate charge of 4 nC facilitates fast switching performance. Includes 2 elements per chip for dual-channel functionality.

This MOSFET is widely used in power management circuits, synchronous rectifiers, and DC-DC converters across industrial, laboratory, HVAC, and manufacturing sectors. onsemi’s PowerTrench technology optimizes system efficiency and power density, providing an advanced solution for modern electronic components.

Explore this and other semiconductor components in the onsemi range at EnvMart for reliable and high-performance electronic parts.

onsemi PowerTrench Dual N/P-Channel Isolated MOSFET, 20 V, 3.7 A, 6-Pin MLP FDMA1032CZ
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Frequently Asked Questions

The maximum continuous drain current of this model is 3.7 A.

It has a maximum drain-source voltage of 20 V.

The maximum drain-source resistance is 95 milliohms.

The MLP package measures 2 mm in length, 2 mm in width, and 0.75 mm in height.

This model operates within a temperature range of -55°C to 150°C.

The typical gate charge is 4 nC.

It utilizes an isolated transistor configuration.

There are 2 elements per chip in this device.

The maximum gate-source voltage is 12 V.

It supports both N-channel and P-channel types.

This MOSFET is suitable for power management circuits, synchronous rectifiers, and DC-DC converters.

The forward voltage is 0.7 V.

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