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onsemi N-Channel Enhancement MOSFET, 128 A, 100 V, 3-Pin TO-220 FDP4D5N10C
Specifications
| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 15.21mm |
| Length | 10.36mm |
| Model | FDP4D5N10C |
| Width | 4.67mm |
| Mount Type | Through Hole |
| Series | FDP |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 128A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 4.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 150W |
| Typical Gate Charge Qg @ Vgs | 48nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- This MOSFET employs PowerTrench® technology with Shielded Gate for low on-state resistance.
- Low RDS(on) of 4.5 mΩ at VGS = 10 V supports efficient power handling.
- Maximum power dissipation is rated at 150 W for robust operation.
- Designed for through-hole mounting with 3 pins for easy PCB integration.
- Operates reliably from -55°C to 175°C, suitable for demanding environments.
- Features a typical gate charge of 48 nC and maximum gate-source voltage of 20 V.
- Low forward voltage drop of 1.3 V minimizes conduction losses.
- Ideal for applications in server power supplies, motor drives, solar inverters, and telecom equipment.
Product Description
onsemi FDP4D5N10C is a high-performance N-Channel Enhancement MOSFET designed utilizing ON Semiconductor's advanced PowerTrench® process. It incorporates Shielded Gate technology which minimizes on-state resistance to achieve excellent switching speed and power efficiency. With a maximum continuous drain current of 128 A and a maximum drain-source voltage of 100 V, this device is well suited for high power applications.
The MOSFET comes in a standard 3-pin TO-220 package for easy through-hole mounting, providing robust mechanical and thermal performance. It has a low typical gate charge of 48 nC and a maximum gate-source voltage of 20 V, offering efficient switching characteristics and protecting the gate from voltage spikes.
Its maximum power dissipation rating of 150 W allows for high power handling in demanding industrial and commercial environments. Operating temperature ranges from -55°C to 175°C ensure reliable performance under varying thermal conditions. The device features an on-resistance RDS(on) of 4.5 mΩ at VGS=10 V, optimizing conduction losses and thermal management.
Applications for the FDP4D5N10C MOSFET include server and telecom power supplies, industrial motor drives, uninterruptible power supplies, solar inverter systems, and computing power adapters. It offers low switching loss, shielded gate power density, and excellent soft recovery diode performance suitable for synchronous rectification and high efficiency power conversion systems.
This MOSFET employs PowerTrench® technology with Shielded Gate for low on-state resistance. Low RDS(on) of 4.5 mΩ at VGS = 10 V supports efficient power handling. Maximum power dissipation is rated at 150 W for robust operation.
Designed for through-hole mounting with 3 pins for easy PCB integration. Operates reliably from -55°C to 175°C, suitable for demanding environments. Features a typical gate charge of 48 nC and maximum gate-source voltage of 20 V.
Low forward voltage drop of 1.3 V minimizes conduction losses. Ideal for applications in server power supplies, motor drives, solar inverters, and telecom equipment.
onsemi products provide high reliability and performance for industrial, telecom, computing, and renewable energy applications. Explore more semiconductor components and MOSFET devices in EnvMart's comprehensive electronics section.
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Frequently Asked Questions
The maximum continuous drain current for this model is 128 A.
The maximum drain-source voltage is rated at 100 V.
The on-resistance (RDS(on)) at VGS = 10 V is 4.5 mΩ.
The maximum power dissipation is rated at 150 W.
The dimensions of the TO-220 package are 15.21 mm in height, 10.36 mm in length, and 4.67 mm in width.
It operates reliably from -55°C to 175°C.
The typical gate charge is 48 nC.
The maximum gate-source voltage for this MOSFET is 20 V.
This model is suitable for applications in server power supplies, motor drives, solar inverters, and telecom equipment.
This MOSFET has 3 pins for through-hole mounting.
The forward voltage drop is 1.3 V, which helps minimize conduction losses.
It employs PowerTrench® technology with Shielded Gate for low on-state resistance and efficient power handling.
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