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onsemi N-Channel Enhancement MOSFET, 30 V, 1.9 A, 3-Pin SOT-23 Surface Mount FDN357N
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 940μm |
| Length | 2.92mm |
| Model | FDN357N |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | FDN357N |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 1.9A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 600mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 500mW |
| Typical Gate Charge Qg @ Vgs | 4.2nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Enhancement mode N-Channel MOSFET with 30 V maximum drain-source voltage.
- Maximum continuous drain current of 1.9 A for medium power applications.
- Surface mount 3-pin SOT-23 package for compact PCB design.
- Low maximum drain-source resistance of 600 mΩ ensuring efficient conduction.
- Fast switching capabilities enabled by a typical gate charge of 4.2 nC at Vgs.
- Wide operating temperature range from -55°C up to 150°C.
- Maximum power dissipation of 500 mW allowing reliable power handling.
- Maximum gate-source voltage ±20 V protecting against voltage spikes.
Product Description
onsemi FDN357N is a high-performance enhancement mode N-Channel MOSFET housed in a small footprint 3-pin SOT-23 surface mount package. It supports a maximum continuous drain current of 1.9 A and a drain-source voltage rating of 30 V, making it suitable for power-efficient switching applications.
The device utilizes Fairchild's proven high cell density DMOS technology, offering low on-resistance and rugged, reliable operation with fast switching capabilities. It operates reliably in a temperature range from -55°C to 150°C and can dissipate up to 500 mW of power, appropriate for moderate thermal environments.
Its compact dimensions (2.92 mm length, 1.4 mm width, 940 μm height) make it ideal for densely packed electronic circuits on printed circuit boards (PCBs). The device withstands gate-source voltages up to ±20 V, protecting circuits from voltage spikes and ensuring durability.
Typical applications include switching regulators, load switching, and power management in industrial controls, consumer electronics, and automotive electronics where efficient, rugged MOSFET performance is critical.
Enhancement mode N-Channel MOSFET. Maximum continuous drain current: 1.9 A. Drain-source voltage rating: 30 V. Surface mount 3-pin SOT-23 package. Low drain-source resistance of 600 mΩ. Typical gate charge of 4.2 nC at Vgs.
Operating temperature from -55°C to 150°C. Maximum power dissipation of 500 mW. Compact size suitable for dense PCB layouts. Maximum gate-source voltage ±20 V.
This onsemi MOSFET is recommended for various industrial, automotive, and consumer electronics power switch applications, making it a versatile option in semiconductor component inventories and design projects. Browse more MOSFET components and solutions on EnvMart to fulfill your design and repair needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 1.9 A.
This MOSFET has a maximum drain-source voltage rating of 30 V.
It is housed in a 3-pin SOT-23 surface mount package.
The maximum power dissipation is 500 mW.
The typical gate charge at Vgs is 4.2 nC.
It operates within a temperature range of -55°C to 150°C.
The dimensions are 2.92 mm in length, 1.4 mm in width, and 940 μm in height.
The maximum gate-source voltage is ±20 V.
The maximum drain-source resistance is 600 mΩ.
It is suitable for switching regulators, load switching, and power management in various electronic applications.
This model features an N-channel enhancement mode.
The country of origin is India.
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