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Vishay N-Channel MOSFET, 14 A Drain Current, 250 V Drain Source Voltage, TO-220 Package IRF644PBF

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Vishay N-Channel MOSFET, 14 A Drain Current, 250 V Drain Source Voltage, TO-220 Package IRF644PBF

Name: Vishay N-Channel MOSFET, 14 A Drain Current, 250 V Drain Source Voltage, TO-220 Package IRF644PBF
Brand: Vishay
SKU: 99565
Price: 1.25 USD
Availability: InStock

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Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin	India
Brand	Vishay
Height	9.01mm
Length	10.41mm
Model	IRF644PBF
Width	4.7mm
Mount Type	Through Hole
Series	IRF644
Maximum Operating Temperature	150°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type N
Maximum Continuous Drain Current Id	14A
Maximum Drain Source Voltage Vds	250V
Maximum Drain Source Resistance Rds	280mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	125W
Typical Gate Charge Qg @ Vgs	68nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.8V
N-Channel MOSFET Transistor, 14.5 A, 200 V, 3-Pin TO-220 Infineon BUZ31Brand	Infineon
N-channel MOSFET,IRF644 14A 250VBrand	Vishay

Key Features

Type N channel MOSFET with enhancement mode operation.
Maximum continuous drain current of 14 amperes.
Drain-source voltage rating of 250 volts.
TO-220 package with 3 pins, suitable for through-hole mounting.
Low drain-source resistance of 280 milliohms.
Typical gate charge at Vgs of 68 nanocoulombs assures fast switching.
Maximum gate-source voltage is 20 volts for reliable operation.
Maximum power dissipation rated at 125 watts.

Product Description

Vishay IRF644PBF is a high-performance N-Channel MOSFET designed for switching and amplification in electronic circuits. Featuring a maximum continuous drain current of 14 A and a drain-source voltage rating of 250 V, this device is ideal for applications requiring efficient power handling and low conduction losses.

Packaged in a robust TO-220 form factor with 3 pins for through-hole mounting, it provides easy integration into various industrial and consumer electronic designs. The MOSFET operates in enhancement mode, providing enhanced control for power management applications.

Key electrical characteristics include a low maximum drain-source resistance of 280 mΩ, typical gate charge of 68 nanocoulombs at gate-source voltage, and a gate-source voltage tolerance up to 20 V, ensuring rapid switching and reliability. The device supports a maximum power dissipation of 125 W with a wide operating temperature range from -55°C to 150°C, making it suitable for rigorous environments.

Physically, the IRF644PBF measures approximately 10.41 mm in length, 9.01 mm in height, and 4.7 mm in width, enabling compact circuit designs. This MOSFET finds application in industrial power supplies, motor drivers, HVAC systems, and various electronic control units requiring efficient switching components.

Type N channel MOSFET with enhancement mode operation. 14 A maximum continuous drain current for high current applications. 250 V maximum drain-source voltage rating. TO-220 package with 3 pins optimized for through-hole mounting.

Low drain-source resistance of 280 mΩ reduces conduction losses. Typical gate charge of 68 nC supports efficient switching performance. Gate-source voltage maximum of 20 V ensures stable operation. Maximum power dissipation of 125 W for thermal handling.

Operates reliably from -55°C up to 150°C ambient temperature. Compact physical dimensions suitable for dense PCB layouts. Browse more Vishay MOSFET devices and semiconductor components on EnvMart for engineering and manufacturing excellence.