Infineon HEXFET Type N-Channel MOSFET 209A 75V Enhancement 3-Pin TO-247 IRFP2907PBF

Infineon IRFP2907PBF HEXFET Type N-Channel MOSFET is a power semiconductor device suitable for high current handling and efficient switching performance. Featuring a maximum continuous drain current (Id) of 209 amperes and a maximum drain-source voltage (Vds) of 75 volts, this enhancement-mode MOSFET operates reliably within demanding electrical environments.

Its TO-247 through-hole package with three pins facilitates integration into various industrial electronics applications where thermal efficiency and mechanical robustness are important.

The device exhibits a low maximum drain-source resistance (Rds) of 5 milliohms, which minimizes power loss and heat generation, enhancing system efficiency. It can dissipate up to 470 watts of power, making it suitable for power conversion, motor control, and switching applications.

Designed to operate across a broad temperature range from -55°C to 175°C, it withstands harsh environmental conditions often found in industrial, automotive, and manufacturing settings.

With a typical gate charge (Qg) of 410 nanocoulombs and a maximum gate-source voltage (Vgs) rating of ±20 volts, the MOSFET supports rapid switching and robust gate protection. The compact form factor with dimensions of 15.9mm by 5.3mm by 20.3mm enables versatile use in space-constrained designs.

This Infineon HEXFET device finds use in industrial power electronics, automotive electronics, motor drives, power management, and other applications requiring efficient switching and low conduction losses.

Maximum continuous drain current of 209 amperes supports high load applications. Maximum drain-source voltage of 75 volts for medium voltage power switching. Enhancement mode channel ensures low power gate control. TO-247 package enables efficient heat dissipation and mechanical stability.

Low Rds(on) minimizes conduction losses improving overall efficiency. Wide temperature operation range enhances reliability in extreme conditions. High power dissipation rating of 470 watts suitable for demanding applications.

Typical gate charge optimized for fast switching performance. Maximum gate-source voltage of ±20 volts protects gate terminal integrity. Compact dimensions for flexible board layouts. Explore a wide range of Infineon power MOSFETs and related semiconductor components at EnvMart for your industrial and electronic design requirements.