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Vishay P-Channel Power MOSFET -12 A -200 V Enhancement 3-Pin TO-247AC IRFP9240PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 20.7mm |
| Length | 15.87mm |
| Model | IRFP9240PBF |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Series | IRFP9240 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247AC |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | -12A |
| Maximum Drain Source Voltage Vds | -200V |
| Maximum Drain Source Resistance Rds | 500mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 150W |
| Typical Gate Charge Qg @ Vgs | 44nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -5V |
Key Features
- Supports continuous drain current of -12 A for moderate high-current applications.
- High voltage switching enabled by -200 V drain-source rating.
- Enhancement mode P-channel MOSFET suitable for high-side switching.
- 150 W maximum power dissipation for sustained power handling.
- Maximum drain-source resistance of 500 mΩ reduces conduction losses.
- Typical gate charge of 44 nC provides predictable gate drive requirements.
- Wide operating temperature range from -55°C to 150°C for robust performance.
- 3-pin TO-247AC package designed for effective heatsinking and thermal management.
Product Description
Vishay IRFP9240PBF is a P-channel power MOSFET designed for high-voltage and power management applications. This device supports a continuous drain current of -12 A and a maximum drain-source voltage of -200 V, making it suitable for moderate to high current and voltage switching requirements. It operates in enhancement mode with a 3-pin TO-247AC through-hole package facilitating robust board mounting and effective heatsinking.
This MOSFET offers a maximum power dissipation of 150 W, allowing sustained operation under demanding conditions. The maximum drain-source resistance (Rds(on)) is 500 mΩ, which minimizes conduction losses during operation. A typical gate charge of 44 nC ensures gate drivers can predictably manage switching characteristics within the maximum gate-source voltage of 20 V, protecting device integrity.
Operating efficiently over a temperature range from -55°C to 150°C, the IRFP9240PBF is well-suited for industrial power modules, DC distribution systems, and high-side switch applications. Its package design allows mounting on a heatsink or chassis for proper thermal management.
Continuous drain current up to -12 A supports moderate load currents. High voltage rating of -200 V enables use in demanding switching applications. Enhancement mode P-channel MOSFET simplifies high-side switching circuits.
Robust thermal design with 150 W maximum power dissipation rating. Minimum conduction losses with 500 mΩ Rds(on) at rated current. Predictable gate drive with 44 nC typical gate charge. Wide operating temperature range from -55°C to 150°C suitable for varied environments.
3-pin TO-247AC package for through-hole mounting and heatsinking. Compliant with RoHS standards ensuring environmental safety.
This power MOSFET is ideal for industrial, power management, and electronic applications requiring reliable high voltage and high current switching. It is suitable for use in power modules, converters, supplies, and polarity protection circuits.
EnvMart offers this Vishay IRFP9240PBF with assured quality for professional electronic component needs in semiconductor applications.
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Frequently Asked Questions
The maximum continuous drain current of the IRFP9240PBF is -12 A, suitable for moderate to high current applications.
This model has a maximum drain-source voltage rating of -200 V, enabling its use in high-voltage switching applications.
The maximum power dissipation for the IRFP9240PBF is 150 W, allowing it to handle sustained operations under demanding conditions.
It comes in a TO-247AC package type, designed for through-hole mounting and effective thermal management.
The typical gate charge for the IRFP9240PBF is 44 nC, which aids in predictable gate drive management.
The maximum drain-source resistance (Rds(on)) is 500 mΩ, which helps to minimize conduction losses during operation.
It operates efficiently over a temperature range from -55°C to 150°C, making it suitable for varied environments.
The channel type of the IRFP9240PBF is P-channel, which is suitable for high-side switching applications.
The maximum gate-source voltage for this model is 20 V, which protects the device integrity during operation.
Yes, the IRFP9240PBF is compliant with RoHS standards, ensuring environmental safety.
The dimensions of the IRFP9240PBF are 20.7 mm in height, 15.87 mm in length, and 5.31 mm in width.
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