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Infineon HEXFET Type N-Channel MOSFET 17 A 100 V Enhancement 3-Pin TO-220 IRF530NPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRF530NPBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 17A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 90mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 70W |
| Typical Gate Charge Qg @ Vgs | 37nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
| N-channel MOSFET,IRF530N 15A 100VBrand | International Rectifier |
| N-Channel MOSFET, 14 A, 100 V, 3-Pin TO-220AB Fairchild IRF530ABrand | Fairchild Semiconductor |
Key Features
- The enhancement mode N-channel MOSFET delivers efficient switching with low on-resistance of 90 milliohms.
- Maximum power dissipation of 70 W supports high-load applications.
- Operating temperature range from -55°C up to 175°C ensures reliable performance under harsh conditions.
- Typical gate charge of 37 nC enables fast switching suited for power management.
- Maximum gate-source voltage of ±20 V provides safe operating limits for control signals.
- Robust TO-220AB package facilitates easy through-hole mounting and thermal management.
- Suitable for industrial automation, motor control, power supplies, and high-efficiency converters.
Product Description
Infineon IRF530NPBF HEXFET Type N-Channel MOSFET is designed for efficient power switching applications with a continuous drain current capability of 17 A and a maximum drain-source voltage of 100 V. Housed in a 3-pin TO-220AB package, it provides robust thermal handling and easy integration in electronic circuits requiring power control.
This enhancement mode MOSFET features a low on-resistance of 90 milliohms which results in reduced conduction losses and improved system efficiency. The device supports a maximum power dissipation of 70 W, making it suitable for demanding industrial and commercial applications.
Its wide operating temperature range from -55°C to 175°C allows reliable function in extreme environments. A typical gate charge of 37 nC at a gate-source voltage ensures fast switching transitions, minimizing energy losses. The maximum gate-source voltage rating of ±20 V guarantees safe drive conditions for controlling circuitry.
The TO-220AB package facilitates through-hole mounting with good heat dissipation capabilities. This MOSFET is widely applicable in power management systems within industrial automation, motor controls, voltage regulation supplies, and high-efficiency power converters and inverters.
Low on-resistance of 90 milliohms for higher efficiency and lower heat generation. Supports a maximum continuous drain current of 17 Amperes for robust current handling. Wide operating temperature range from -55°C to 175°C for reliability in harsh conditions.
Fast switching enabled by typical gate charge of 37 nanocoulombs reduces energy loss. Maximum gate-source voltage of ±20 V ensures device safety with control signals. Package type TO-220AB allows ease of mounting and effective thermal management.
Applications include industrial automation, motor control, power supplies, and converters.
This Infineon MOSFET is a critical component in electronic systems requiring efficient power switching and control. The HEXFET technology reduces conduction losses, thereby enhancing performance in modern automation, control, and power management solutions.
Explore more semiconductor and MOSFET products on EnvMart for industrial and laboratory applications.
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Frequently Asked Questions
The maximum continuous drain current for this MOSFET is 17 A.
This model has a maximum drain-source voltage rating of 100 V.
The on-resistance of this N-channel MOSFET is 90 milliohms.
The operating temperature range for this MOSFET is from -55°C to 175°C.
The typical gate charge for this device is 37 nC at a gate-source voltage.
The maximum power dissipation of this model is 70 W.
This MOSFET is housed in a TO-220AB package type, which allows for through-hole mounting.
The maximum gate-source voltage rating for this model is ±20 V.
The dimensions of this MOSFET are 10.54 mm in length, 4.69 mm in width, and 8.77 mm in height.
This model is suitable for applications in industrial automation, motor control, power supplies, and high-efficiency converters.
The channel type of this MOSFET is N-channel.
This MOSFET has a pin count of 3.
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