onsemi NVD5C434N Type N-Channel MOSFET, 163 A, 40 V Enhancement Mode, 3-Pin TO-252 Package

The onsemi NVD5C434N is a Type N-Channel Power MOSFET designed to handle high continuous drain currents up to 163 A with a maximum drain-source voltage of 40 V. Packaged in a TO-252 surface mount format with 3 pins, this component offers low resistance (2.1 mΩ) in the drain-source path, making it highly efficient for power switching applications.

This enhancement mode device is suitable for industrial, automotive, and power electronics applications that require reliable high current handling and superior thermal dissipation with a maximum power rating of 117 W. It operates reliably across a wide temperature range from -55°C to 175°C, supporting demanding environments.

The MOSFET features a typical gate charge of 80.6 nC at a gate-source voltage of 8 V and withstands up to 20 V at the gate-source junction, providing robust switching characteristics. Its forward voltage drop of 1.2 V contributes to reduced conduction losses.

The compact dimensions of 6.73 mm length, 6.22 mm width, and 2.38 mm height enable easy integration on PCBs in dense circuit designs. Maximum continuous drain current is 163 amperes. Maximum drain-source voltage rating is 40 volts.

Low on-resistance value of 2.1 milliohms. Maximum power dissipation up to 117 watts. 3-pin TO-252 surface mount package. Operating temperature range from -55°C to 175°C. Typical gate charge of 80.6 nanocoulombs. Gate-source voltage maximum rating of 20 volts.

Forward voltage drop of 1.2 volts. Complies with AEC-Q101 automotive reliability standard. This semiconductor MOSFET is ideal for power management, motor control, automotive electronics, and industrial power supply circuits.

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