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Infineon Dual N-Channel Normal Level Enhancement Mode MOSFET 100V 16A SuperSO8 IPG16N10S461ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPG16N10S461ATMA1 |
| Series | IPG16N10S4-61 |
| Maximum Operating Temperature | 175°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS, AEC Q101 |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 16A |
| Maximum Drain Source Voltage Vds | 100V |
| Channel Mode | Dual N |
| Maximum Power Dissipation Pd | 29W |
| Typical Gate Charge Qg @ Vgs | 5.4nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Transistor Configuration | Dual N Channel Normal Level Enhancement Mode |
Key Features
- Dual N-channel enhancement mode MOSFET for high-performance switching applications.
- Supports maximum drain-source voltage of 100V.
- Delivers up to 16A maximum continuous drain current.
- SuperSO8 5 x 6 package with 8-pin configuration for efficient PCB mounting.
- Typical gate charge of 5.4nC to enable fast switching speeds.
- Maximum power dissipation of 29W ensures reliable operation under heavy loads.
- AEC-Q101 qualified and RoHS compliant for automotive and environmentally conscious uses.
- Operating temperature range from -55°C to 175°C for high thermal stability.
Product Description
Infineon IPG16N10S461ATMA1 is a dual N-channel normal level enhancement mode MOSFET specially developed for efficient power switching in automotive and industrial electronics. The device delivers a high maximum continuous drain current of 16A with a drain-source voltage of 100V, making it suitable for demanding high-power applications.
This MOSFET offers low gate charge for fast switching responses, typical gate charge at Vgs of 5.4nC, and features a compact SuperSO8 package (5 x 6 mm) with 8 pins, facilitating space-saving design and reliable PCB integration. Dual-channel configuration enables more versatile circuit options, supporting multiple switching arrangements.
With maximum power dissipation rated at 29W and a wide operating temperature range from -55°C to 175°C, the IPG16N10S461ATMA1 stands out for its thermal reliability and robustness. The device is AEC-Q101 qualified, meeting automotive standards for stringent environments, and it is also RoHS compliant, ensuring environmental responsibility.
Dual N-channel enhancement mode MOSFET for high-performance switching applications. Supports maximum drain-source voltage of 100V. Delivers up to 16A maximum continuous drain current. SuperSO8 5 x 6 package with 8-pin configuration for efficient PCB mounting.
Typical gate charge of 5.4nC to enable fast switching speeds. Maximum power dissipation of 29W ensures reliable operation under heavy loads. AEC-Q101 qualified and RoHS compliant for automotive and environmentally conscious uses.
Operating temperature range from -55°C to 175°C for high thermal stability. 100% avalanche tested to guarantee safety and robustness. Ideal for applications like motor control, automotive systems, and industrial switching.
This device is particularly suitable for use in motor drivers, industrial automation, automotive electronics, and other demanding power switching contexts. Its qualification for automotive standards makes it a preferred part for vehicular electronic control units, while its compact form is excellent for space-constrained industrial boards.
Explore more MOSFETs and semiconductor solutions from Infineon and other leading brands in the EnvMart Electronics & Electricals category to meet evolving design requirements.
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Frequently Asked Questions
The maximum continuous drain current for this model is 16A.
This MOSFET supports a maximum drain-source voltage of 100V.
The typical gate charge at Vgs for this unit is 5.4nC, enabling fast switching speeds.
The maximum power dissipation for the IPG16N10S461ATMA1 is rated at 29W.
It operates within a temperature range of -55°C to 175°C.
This model comes in a SuperSO8 package measuring 5 x 6 mm with 8 pins.
Yes, it is AEC-Q101 qualified, meeting automotive standards for stringent environments.
This device features a dual N-channel configuration.
It is RoHS compliant, ensuring it meets environmental responsibility standards.
This model is suitable for applications like motor control, automotive systems, and industrial switching.
The maximum gate-source voltage for this unit is 20V.
The country of origin for this MOSFET is India.
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