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Infineon BSZ011NE2LS5IATMA1 N-Channel MOSFET, 212A, 40V, 8-Pin TSDSON-8 FL
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSZ011NE2LS5IATMA1 |
| Mount Type | Surface |
| Series | BSZ |
| Maximum Operating Temperature | 175°C |
| Package Type | TSDSON-8 FL |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 212A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Maximum continuous drain current of 212A for robust power handling.
- Rated for 40V drain-source voltage, ideal for automotive and industrial circuits.
- Very low on-resistance of 0.7mΩ minimizes power loss.
- High power dissipation up to 81W supports efficient operation.
- 8-pin TSDSON-8 FL surface mount package enables compact PCB designs.
- Operates reliably across a wide temperature range of -55°C to 175°C.
- RoHS compliant and halogen-free construction for environmental safety.
- Monolithic integrated Schottky-like diode improves switching efficiency.
Product Description
Infineon BSZ011NE2LS5IATMA1 N-Channel MOSFET offers exceptional performance and reliability, designed for high-efficiency power conversion, voltage regulation, and fast switching in demanding automotive and industrial applications. With a maximum continuous drain current of 212A and a drain-source voltage rating of 40V, this MOSFET supports robust current flow while providing safety and durability in circuits requiring high output.
The TSDSON-8 FL package features a surface mount design with 8 pins, allowing for compact integration onto printed circuit boards. The device boasts a very low on-resistance of 0.7mΩ, which minimizes heat generation and maximizes efficiency during operation. Supporting a power dissipation of up to 81W, it is suitable for use in systems with substantial power demands, including motor drives, DC-DC converters, and high-performance buck converters.
This model includes monolithic integrated Schottky-like diode functionality, enhancing switching performance and reducing reverse recovery losses. Its automotive-grade construction ensures long-term stability under challenging temperature conditions, with an operating range from -55°C up to 175°C. The gate-source voltage is rated at 20V, facilitating secure interface with driver ICs and microcontroller signals.
Infineon's OptiMOS 5 Power-Transistor technology delivers advanced features, including Pb-free lead plating, RoHS compliance, and halogen-free construction in accordance with IEC61249-2-21. The device supports efficient production workflows, especially when supplied on reels for automated assembly.
Maximum drain current of 212A and drain-source voltage of 40V. Ultra-low on-resistance for efficient power delivery. Integrated Schottky-like diode reduces switching losses. TSDSON-8 FL surface mount package for space-saving design.
Safe operation between -55°C and 175°C. RoHS and halogen-free for green manufacturing requirements. Reliable for use in industrial, automotive, and commercial electronics.
Ideal applications include industrial motor controls, power supply modules, automotive electronics, high-current switching, and DC-DC conversion. This MOSFET is a top choice for engineers seeking efficient power management and durability in advanced electronic assemblies.
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Frequently Asked Questions
The maximum continuous drain current for this model is 212A, allowing for robust power handling in various applications.
This MOSFET is rated for a drain-source voltage of 40V, making it suitable for automotive and industrial circuits.
The on-resistance is very low at 0.7mΩ, which minimizes power loss during operation.
It supports a maximum power dissipation of up to 81W, facilitating efficient operation in high-demand applications.
The device operates reliably across a wide temperature range of -55°C to 175°C.
This model comes in an 8-pin TSDSON-8 FL surface mount package, allowing for compact PCB designs.
The maximum gate-source voltage is rated at 20V, ensuring compatibility with driver ICs and microcontroller signals.
Yes, it includes a monolithic integrated Schottky-like diode that improves switching efficiency and reduces reverse recovery losses.
Yes, it is RoHS compliant and halogen-free, aligning with environmental safety requirements.
This MOSFET is ideal for applications such as industrial motor controls, power supply modules, automotive electronics, and DC-DC conversion.
The typical gate charge at Vgs is 80nC, which contributes to its efficient switching performance.
The country of origin for this MOSFET is India.
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