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Vishay N-Channel MOSFET 415A 100V Depletion PowerPAK SO-8DC 8-Pin SiDR220EP-T1-RE3

Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Length 6.15mm
Model SiDR220EP-T1-RE3
Width 5.15mm
Mount Type Surface
Maximum Operating Temperature 125°C
Package Type PowerPAK SO-8DC
Minimum Operating Temperature -55°C
Pin Count 8
Automotive Standard AEC-Q101
Channel Type Type N
Maximum Continuous Drain Current Id 415A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 0.00082Ω
Channel Mode Depletion
Maximum Power Dissipation Pd 120W
Typical Gate Charge Qg @ Vgs 46.1nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.2V

Key Features

  • Features a depletion-mode N-Channel MOSFET design for high conductance at zero gate bias.
  • Supports a maximum drain current of 415A and drain-source voltage up to 100V.
  • Low drain-source resistance of 0.00082Ω enhances efficiency for power switching applications.
  • Comes in a surface-mount PowerPAK SO-8DC package with 8 pins for reliable PCB layout.
  • Supports operating temperatures from -55°C to 125°C, suitable for demanding environments.
  • Maximum power dissipation of 120W ensures compatibility with high power density circuits.
  • Automotive AEC-Q101 qualified for reliability in automotive and industrial uses.

Product Description

The Vishay SiDR220EP-T1-RE3 is a high-performance N-Channel MOSFET featuring a maximum continuous drain current of 415A and a drain-source voltage up to 100V. Engineered in a depletion-mode configuration, this MOSFET provides a typically conducting path even at zero gate-source bias, making it highly suitable for applications requiring stable current regulation and switching.

This model is housed in an 8-pin PowerPAK SO-8DC surface-mount package, providing excellent heat dissipation and compact footprint for modern high-density PCB layouts. Its extremely low maximum drain-source resistance of 0.00082Ω contributes to minimized conduction losses and improved energy efficiency.

Features a robust and reliable design for high-power applications. Depletion-mode operation provides flexibility for analog and digital circuit designers. Offers a typical gate charge Qg @ Vgs of 46.1nC, making it suitable for fast switching circuits.

Designed for high-temperature and high-power environments: operates from -55°C to 125°C. Capable of 120W maximum power dissipation, enabling usage in demanding electronic power modules. Automotive AEC-Q101 qualification ensures dependable performance in automotive utilities.

1.2V forward voltage (Vf) and maximum gate-source voltage of 20V for safe, wide-range control. Compact dimensions (6.15mm × 5.15mm) for optimized board space utilization.

The Vishay SiDR220EP-T1-RE3 is commonly used in industrial power supplies, synchronous buck converters, automotive load switches, high-efficiency DC-DC conversion systems, and sophisticated analog circuitry requiring depletion-type MOSFETs for current regulation. Its top-side cooling feature provides a venue for improved thermal management, thereby extending device longevity in high-power settings.

Packaged for automated insertion, this MOSFET offers streamlined manufacturing and assembly, improving production efficiency for OEMs. This product is a reliable choice for industries such as automotive electronics, industrial automation, power management, telecommunications, and renewable energy systems.

For more Vishay MOSFET solutions suited to your technical and commercial requirements, explore EnvMart's comprehensive category of discrete semiconductors and power devices.

Vishay N-Channel MOSFET 415A 100V Depletion PowerPAK SO-8DC 8-Pin SiDR220EP-T1-RE3
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Frequently Asked Questions

The maximum continuous drain current for this model is 415A.

It supports a maximum drain-source voltage of 100V.

The typical gate charge at Vgs is 46.1nC.

This model comes in a PowerPAK SO-8DC surface-mount package with 8 pins.

It has a maximum power dissipation of 120W.

The operating temperature range is from -55°C to 125°C.

The maximum drain-source resistance is 0.00082Ω.

This model is AEC-Q101 qualified, ensuring reliability in automotive applications.

It features a depletion-mode N-Channel design.

The forward voltage is specified at 1.2V.

It is commonly used in industrial power supplies, synchronous buck converters, and automotive load switches.

The dimensions are 6.15mm in length and 5.15mm in width.

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