Interested in this product? Drop us an email and we will let you know when it's available for order.
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Vishay N-Channel MOSFET 4.8A 150V PowerPAK SO-8 Surface Mount SI7898DP-T1-E3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.12mm |
| Length | 6.25mm |
| Model | SI7898DP-T1-E3 |
| Width | 5.26mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK SO-8 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | IEC 61249-2-21 |
| Pin Count | 8 |
| ANSI/ESD S20.20 | 2014 |
| BS EN 61340-5-1 | 2007 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 4.8A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 0.085Ω |
| Maximum Power Dissipation Pd | 5W |
| Typical Gate Charge Qg @ Vgs | 21nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- N-channel PowerPAK SO-8 MOSFET suitable for industrial and high-speed circuits.
- Supports maximum continuous drain current of 4.8A.
- Rated up to 150V drain-source voltage for demanding switching applications.
- Low drain-source resistance of 0.085Ω for efficient power transmission.
- Maximum power dissipation of 5W.
- 8-pin surface mount package enables compact PCB integration.
- Fast switching TrenchFET technology with PWM optimization.
- Extended temperature range of -55°C to 150°C for reliable operation.
Product Description
Vishay SI7898DP-T1-E3 is an advanced N-Channel MOSFET built for efficient power switching and durable operation in industrial, DC/DC power supply, and motor control systems. It leverages the PowerPAK SO-8 surface mount package to provide a compact footprint with superior thermal characteristics.
Designed for both high-voltage and high-current applications, this MOSFET supports a continuous drain current of up to 4.8A and is rated for a maximum drain-source voltage of 150V. Its low drain-source resistance of just 0.085Ω is engineered to minimize conduction losses, boosting efficiency in fast-switching applications. The maximum power dissipation is rated at 5W, making it well-suited for handling substantial loads.
The device incorporates Vishay’s TrenchFET technology which offers rapid switching performance and PWM optimization, enabling precise control and reliable operation. Its 8-pin PowerPAK SO-8 package supports surface mounting and streamlines circuit integration for PCB assembly in modern electronics manufacturing.
Operating reliably across a wide temperature range from -55°C to 150°C, the SI7898DP-T1-E3 is designed to withstand harsh industrial environments. It is halogen-free and lead-free, complying with IEC 61249-2-21 standards for environmentally conscious installations. Certifications include ANSI/ESD S20.20 and BS EN 61340-5-1, underscoring its suitability for sensitive electronics and stringent applications.
Applications include primary switches for DC/DC conversion, industrial motor drives, and other high-speed switching roles across electronics manufacturing, testing, R&D, and commercial circuit design. Its excellent thermal management, high current rating, and reliable performance make it a key component in advanced industrial automation, power management systems, and electronic controls.
For further browsing, explore the Vishay MOSFET category to find compatible devices for your next industrial or electronics project on EnvMart.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The Vishay SI7898DP-T1-E3 supports a maximum continuous drain current of 4.8A.
This model is rated for a maximum drain-source voltage of 150V, making it suitable for high-voltage applications.
The maximum drain-source resistance is 0.085Ω, which helps minimize conduction losses during operation.
It has a maximum power dissipation rating of 5W, allowing it to handle substantial loads effectively.
The dimensions of the PowerPAK SO-8 package are 6.25mm in length, 5.26mm in width, and 1.12mm in height.
This unit supports surface mounting, facilitating compact PCB integration.
It complies with IEC 61249-2-21, ANSI/ESD S20.20, and BS EN 61340-5-1 standards, ensuring suitability for sensitive electronics.
The typical gate charge is 21nC at Vgs, which is important for efficient switching performance.
The maximum gate-source voltage for this MOSFET is 20V, which is critical for its operational limits.
This model features an N-channel configuration, suitable for various power management applications.
Related Products
$0.97
$0.94
-3%
New
Other Products from this brand
$1.99
$1.93
-3%
New
$1.69
$1.64
-3%
New
$1.82
$1.77
-3%
New
$1.54
$1.50
-3%
New
$0.30
$0.29
-3%
New
Recently Viewed Products
Interested in this product? Drop us an email and we will let you know when it's available for order.
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent