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Vishay N-Channel MOSFET 23 A, 40 V, Enhancement Mode, SO-8 Package, Surface Mount, 8-Pin SIR418DP-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.12mm |
| Length | 6.25mm |
| Model | SIR418DP-T1-GE3 |
| Width | 5.26mm |
| Mount Type | Surface |
| Series | SiR418DP |
| Maximum Operating Temperature | 150°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 23A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 39W |
| Typical Gate Charge Qg @ Vgs | 50nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.71V |
Key Features
- Features an 8-pin SO-8 surface mount package suitable for compact PCB layouts.
- Supports enhancement mode operation ensuring low power dissipation.
- Maximum power dissipation rating of 39 W enables robust thermal management.
- Operates reliably between -55°C and 150°C ensuring broad industrial application suitability.
- Low maximum drain-source resistance of 6 mΩ provides efficient conduction.
- Typical gate charge at Vgs is 50 nC for fast switching performance.
- Gate-source voltage ratings of -20 V to +20 V tolerate voltage spikes effectively.
- Compact dimensions with a length of 6.25 mm, width of 5.26 mm, and height of 1.12 mm.
Product Description
Vishay SIR418DP-T1-GE3 is a high-quality N-Channel MOSFET designed for efficient switching and power management in electronic circuits. It offers a maximum continuous drain current of 23 A and a maximum drain-source voltage of 40 V, making it suitable for applications requiring robust performance and energy efficiency.
The device is packaged in an 8-pin SO-8 surface mount format, facilitating easy PCB integration in compact designs. It operates in enhancement mode and features a low on-resistance of 6 mΩ, minimizing conduction losses and heat generation during operation.
This MOSFET supports a maximum power dissipation of 39 W and can operate reliably in wide temperature ranges from -55°C up to 150°C, catering to demanding industrial, automotive, and power supply environments.
Its typical gate charge of 50 nC at the gate-source voltage enhances fast switching capabilities while the gate-source voltage tolerance between -20 V and +20 V protects the device from transient voltage spikes.
Compact physical dimensions - length 6.25 mm, width 5.26 mm, and height 1.12 mm - make it well-suited for space-constrained electronic assemblies. This product originates from China and does not carry automotive certification.
Features an 8-pin SO-8 surface mount package suitable for compact PCB layouts. Supports enhancement mode operation ensuring low power dissipation. Maximum power dissipation rating of 39 W enables robust thermal management.
Operates reliably between -55°C and 150°C ensuring broad industrial application suitability. Low maximum drain-source resistance of 6 mΩ provides efficient conduction. Typical gate charge at Vgs is 50 nC for fast switching performance.
Gate-source voltage ratings of -20 V to +20 V tolerate voltage spikes effectively. Compact dimensions with a length of 6.25 mm, width of 5.26 mm, and height of 1.12 mm.
This MOSFET is suitable for use in industrial electronics, power management, motor drives, and other applications requiring efficient power switching and thermal stability. Explore more products in MOSFET category on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 23 A.
It has a maximum drain-source voltage rating of 40 V.
The MOSFET is packaged in an 8-pin SO-8 surface mount format, suitable for compact PCB layouts.
The maximum power dissipation rating is 39 W, allowing for robust thermal management.
It operates reliably between -55°C and 150°C, making it suitable for a variety of industrial applications.
The maximum drain-source resistance is 6 mΩ, which provides efficient conduction.
The typical gate charge at Vgs is 50 nC, which enhances fast switching performance.
The gate-source voltage ratings are from -20 V to +20 V, which helps tolerate voltage spikes effectively.
The dimensions are 6.25 mm in length, 5.26 mm in width, and 1.12 mm in height.
This model is an N-Channel MOSFET, designed for enhancement mode operation.
It is suitable for industrial electronics, power management, motor drives, and other applications requiring efficient power switching.
The country of origin for this MOSFET is China.
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