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Vishay E Series N-Channel Power MOSFET, 42A, 650V, Depletion, 8-Pin PowerPAK 10x12 SIHK055N60E-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | SIHK055N60E-T1-GE3 |
| Mount Type | Surface |
| Series | E |
| Maximum Operating Temperature | +150°C |
| Package Type | PowerPAK 10 x 12 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 42A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 0.056Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 236W |
| Typical Gate Charge Qg @ Vgs | 54nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Suitable for traction inverter stage power switches and automotive control systems.
- 650V drain-source voltage for robust high-voltage operation.
- 42A continuous drain current supports heavy-load requirements.
- Depletion mode enhances efficiency in switching circuits.
- PowerPAK 10x12 surface-mount package ensures efficient PCB thermal management.
- Low Rds(on) of 0.056Ω reduces conduction losses and improves performance.
- AEC-Q101 automotive-grade qualification for extended reliability.
- Wide operating temperature range from -55°C to +150°C.
Product Description
Vishay SIHK055N60E-T1-GE3 E Series N-Channel Power MOSFET combines advanced high-voltage switching capabilities with dependable performance tailored for industrial, automotive, and power-conversion environments. Featuring a 650V drain-source voltage and 42A continuous drain current, this depletion-mode MOSFET enables operation in circuitry demanding rapid switching and sustained, heavy-load throughput. The PowerPAK 10x12 surface-mount package enables compact and efficient PCB layouts, facilitating superior thermal conduction and streamlined assembly for dense electronic designs.
With an ultra-low Rds(on) of just 0.056Ω, the device minimizes conduction losses, optimizing energy transfer and reducing heat generation. The robust automotive-grade qualification (AEC-Q101) ensures reliable deployment in demanding vehicle electronics, traction inverter stages, and motor-drive controllers. Operating reliably from -55°C to +150°C, this MOSFET is suited for both extreme ambient conditions and under-the-hood applications.
650V rating supports high-voltage switching, DC-DC conversion, and industrial power-supply stages. 42A continuous drain current, ideal for heavy-duty load management. 54nC typical gate charge reduces required switching energy and improves efficiency.
30V maximum gate-source voltage ensures robust operation with wider drive margin. 236W maximum power dissipation supports sustained throughput in high-density designs. RoHS and AEC-Q101 certifications enhance compliance in regulated environments.
Applications include traction inverter stage power switches, high-voltage DC-DC converter outputs, motor-drive automotive controllers, and industrial power-supply switching. Its surface-mount footprint makes it highly appropriate for automotive, industrial, and commercial assemblies where dense layouts and efficient heat dissipation are essential.
Package Type: PowerPAK 10x12, 8-Pin, surface-mount. For more MOSFETs, browse EnvMart's Semiconductor category featuring Vishay and other leading brands for all your high-performance switching needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 42A, allowing it to support heavy-load requirements in various applications.
This MOSFET has a maximum drain-source voltage rating of 650V, making it suitable for high-voltage applications.
It comes in a PowerPAK 10x12 surface-mount package, which facilitates efficient PCB thermal management and compact layouts.
The Rds(on) value for this model is 0.056Ω, which helps to reduce conduction losses and improve performance.
The operating temperature range for this unit is from -55°C to +150°C, allowing it to function in extreme ambient conditions.
This model complies with the AEC-Q101 automotive standard, ensuring reliability in automotive applications.
The typical gate charge for this unit is 54nC, which reduces the required switching energy and enhances efficiency.
The maximum power dissipation for this MOSFET is 236W, supporting sustained throughput in high-density designs.
The maximum gate-source voltage for this model is 30V, which ensures robust operation with a wider drive margin.
This model features an N-channel type, which is commonly used in various electronic applications.
It is suitable for traction inverter stage power switches, high-voltage DC-DC converter outputs, and motor-drive automotive controllers.
The country of origin for this MOSFET is India.
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