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Vishay E Type N-Channel Power MOSFET 29A 600V 8-Pin PowerPAK 10x12 SIHK075N60E-T1-GE3

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Vishay E Type N-Channel Power MOSFET 29A 600V 8-Pin PowerPAK 10x12 SIHK075N60E-T1-GE3

Name: Vishay E Type N-Channel Power MOSFET 29A 600V 8-Pin PowerPAK 10x12 SIHK075N60E-T1-GE3
Brand: Vishay
SKU: 114387
Price: 5.66 USD
Availability: InStock

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Category Power MOSFET Brand Vishay Condition New

Specifications

Country of Origin	India
Brand	Vishay
Model	SIHK075N60E-T1-GE3
Mount Type	Surface
Series	E
Maximum Operating Temperature	150°C
Package Type	PowerPAK 10 x 12
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	8
Channel Type	Type N
Maximum Continuous Drain Current Id	29A
Maximum Drain Source Voltage Vds	600V
Maximum Drain Source Resistance Rds	0.08Ω
Maximum Power Dissipation Pd	167W
Typical Gate Charge Qg @ Vgs	41nC
Maximum Gate Source Voltage Vgs	30V
Forward Voltage Vf	1.2V

Key Features

The 8-pin PowerPAK 10x12 surface-mount package provides compactness and thermal efficiency.
Low on-resistance of 0.08Ω minimizes power loss during conduction.
Maximum power dissipation rating of 167W ensures robust thermal handling.
Typical gate charge of 41nC allows precise switching control.
Operates reliably within -55°C to 150°C temperature range for harsh environments.
Supports a maximum gate-source voltage of 30V, ensuring wide gate-drive margin.
Forward voltage is rated at 1.2V for optimized performance.
Complies with RoHS environmental standards for safe electronic use.

Product Description

Vishay SIHK075N60E-T1-GE3 E Type N-Channel Power MOSFET is a high-voltage semiconductor designed for switching and power conversion applications. With a maximum continuous drain current of 29A and a drain-source voltage rating of 600V, this device is ideal for demanding electronic systems.

Equipped with an 8-pin PowerPAK 10x12 surface-mount package, it offers excellent compactness and effective thermal dissipation up to 167 watts under appropriately designed PCB conditions. The low Rds(on) of 0.08 ohms helps reduce conduction losses, improving overall system efficiency.

The MOSFET operates over a wide temperature range from -55°C to 150°C, making it suited for harsh and varied ambient conditions. It features a typical gate charge of 41 nanocoulombs and supports a gate-source voltage tolerance of up to 30 volts, ensuring controlled switching in complex circuits.

This RoHS-compliant device is engineered for industrial motor-drive inverters, supporting powerful switching requirements. It finds application in power supplies for server and telecom equipment, renewable energy DC-DC converters, high-voltage switch controllers, and LED lighting driver circuits requiring robust high-voltage switching.

The PowerPAK package facilitates reliable surface mounting with solder pads ensuring mechanical and thermal contact essential for high-power dissipation applications. Key technical features include a forward voltage rating of 1.2V and adherence to current industrial environmental standards.

The 8-pin PowerPAK 10x12 package enables compact and efficient surface mounting. 29A continuous drain current and 600V drain-source voltage provide strong switching capacity. Low on-resistance (0.08Ω) reduces power loss and enhances efficiency.

Maximum power dissipation of 167W supports high thermal load. Wide operating temperature range from -55°C to 150°C for varied environments. Typical gate charge of 41nC allows smooth switching dynamics. Gate-source voltage maximum of 30V ensures gate-drive margin safety.

RoHS compliant for environmental safety. Widely used in industrial and renewable energy power applications. Suitable for high-voltage switch controller circuits and LED drivers. Explore the Electronics & Electricals Power MOSFET category at EnvMart for more industrial-grade semiconductor solutions.