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Infineon HEXFET Type N-Channel MOSFET 57A, 100V, TO-263, 3-Pin, Surface Mount IRF3710STRLPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | IRF3710STRLPBF |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | EIA 418 |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 57A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 23mΩ |
| Maximum Power Dissipation Pd | 3.8W |
| Typical Gate Charge Qg @ Vgs | 86.7nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Supports maximum continuous drain current up to 57A.
- Maximum drain-source voltage is rated at 100V.
- TO-263 surface mount package with 3-pin configuration.
- Ultra low on-resistance and fast switching for high current applications.
- Operating temperature range from -55°C to 175°C.
- Maximum power dissipation of 3.8W in typical applications.
- Compliant with EIA 418 standards and lead-free.
Product Description
Infineon IRF3710STRLPBF HEXFET Type N-Channel MOSFET is designed for applications requiring high current and high voltage switching. With a maximum continuous drain current of 57A and a drain-source voltage of 100V, it offers robust performance for demanding electronic circuits. The TO-263 surface mount package ensures ease of integration into PCB designs, particularly in automated manufacturing settings.
The HEXFET construction provides ultra low on-resistance, fast switching times, and high efficiency suitable for power management, motor control, and inverter circuits. Its low internal connection resistance supports high current flow while maintaining operational stability. This MOSFET operates reliably over a wide temperature range from -55°C to 175°C, making it ideal for industrial, automotive, and commercial electronics.
Supports maximum continuous drain current up to 57A. Maximum drain-source voltage is rated at 100V. TO-263 surface mount package with 3-pin configuration. Ultra low on-resistance and fast switching for high current applications.
Operating temperature range from -55°C to 175°C. Maximum power dissipation of 3.8W in typical applications. Compliant with EIA 418 standards and lead-free.
Infineon's HEXFET MOSFETs are widely used in switching power supplies, DC-DC converters, LED drivers, and other industrial control systems. The IRF3710STRLPBF model is particularly beneficial in areas where compact, surface mount solutions are required, such as automotive modules, lab controls, and advanced manufacturing electronics.
For engineers and buyers, the IRF3710STRLPBF combines advanced processing techniques, ensuring low on-resistance, fast response, and reliability. This MOSFET is suitable for professional electronic assembly, prototype development, and production environments.
Explore EnvMart's full selection of Infineon HEXFET MOSFETs and related semiconductor components for optimal circuit performance and industrial-grade reliability.
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Frequently Asked Questions
The maximum continuous drain current for this model is 57A.
This MOSFET has a maximum drain-source voltage rating of 100V.
It comes in a TO-263 surface mount package with a 3-pin configuration.
The operating temperature range for this MOSFET is from -55°C to 175°C.
The maximum power dissipation in typical applications is 3.8W.
The typical gate charge at Vgs is 86.7nC.
The maximum gate-source voltage for this model is 20V.
The dimensions of this MOSFET are 10.67mm in length, 9.65mm in width, and 4.83mm in height.
The maximum drain-source resistance for this model is 23mΩ.
It is compliant with EIA 418 standards and is lead-free.
This MOSFET is suitable for applications in power management, motor control, and inverter circuits.
The country of origin for this MOSFET is India.
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