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Infineon CoolMOS P7 Type N-Channel MOSFET 29A 600V Enhancement 3-Pin TO-247 IPW60R120P7XKSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 41.42mm
Length 6.13mm
Model IPW60R120P7XKSA1
Width 5.21mm
Mount Type Through Hole
Series CoolMOS P7
Maximum Operating Temperature 150°C
Package Type TO-247
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type N
Maximum Continuous Drain Current Id 29A
Maximum Drain Source Voltage Vds 600V
Maximum Drain Source Resistance Rds 120mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 95W
Typical Gate Charge Qg @ Vgs 36nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 0.9V

Key Features

  • Latest 7th generation CoolMOS P7 N-channel MOSFET for efficient power switching.
  • Supports maximum continuous drain current Id of 29A.
  • High drain-source voltage capability - 600V for robust industrial designs.
  • 3-Pin TO-247 package for secure through-hole mounting.
  • Enhancement mode operation with maximum gate-source voltage of 20V.
  • Capable of high power dissipation - up to 95W.
  • Wide operating temperature range from -55°C to 150°C.
  • Typical gate charge Qg of 36nC assures swift switching.

Product Description

Infineon IPW60R120P7XKSA1 CoolMOS P7 Type N-Channel MOSFET combines cutting-edge efficiency with easy integration for demanding industrial and electronic applications. This enhancement-mode power MOSFET supports 29A maximum continuous drain current and 600V drain-source voltage, making it ideal for high-voltage and high-current switching tasks.

Featuring the reliable TO-247 package with three pins, the device allows secure through-hole installation for robust PCB layouts. The CoolMOS P7 series brings minimized Rds(on) (120mΩ), rapid switching with typical gate charge Qg of 36nC, and a wide operating temperature span from -55°C to 150°C. With integrated gate resistor and rugged body diode, reliability and ESD protection are built-in.

Latest generation CoolMOS P7 N-channel MOSFET suitable for power supplies, motor control, and inverter circuits. 29A continuous drain current supports high-load applications. 600V drain-source voltage for robust industrial power conversion designs.

TO-247 package for heat dissipation and mechanical stability. Low Rds(on) (120mΩ) ensures efficient switching and reduced energy loss. Enhancement mode and maximum gate-source voltage of 20V enable flexible control. Maximum power dissipation of 95W assures durability under heavy loads.

Integrated gate resistor and ESD robustness suitable for industrial environments. Wide temperature range for deployment in varying conditions. Automotive and industrial grade reliability for a broad spectrum of applications.

Use cases include high-efficiency power supplies, industrial motor drives, and inverter circuits in manufacturing, automation, and laboratory setups. Explore more MOSFETs and Infineon innovations within the Electronics & Electricals category on EnvMart.

Infineon CoolMOS P7 Type N-Channel MOSFET 29A 600V Enhancement 3-Pin TO-247 IPW60R120P7XKSA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 29A.

It can handle a maximum drain-source voltage of 600V.

This model comes in a TO-247 package type, which allows for secure through-hole mounting.

The typical gate charge for this unit is 36nC.

The maximum power dissipation capability is 95W.

It operates within a temperature range of -55°C to 150°C.

This model features a 3-pin configuration.

The Rds(on) value is 120mΩ, which helps in efficient switching.

It utilizes a Type N channel.

The maximum gate-source voltage is 20V.

This model is suitable for applications such as power supplies, motor control, and inverter circuits.

The country of origin for this MOSFET is India.

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