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Infineon CoolMOS P6 N-Channel MOSFET 23.8A 600V Enhancement 3-Pin TO-220 IPP60R160P6XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.45mm |
| Length | 10.36mm |
| Model | IPP60R160P6XKSA1 |
| Width | 4.57mm |
| Mount Type | Through Hole |
| Series | CoolMOS P6 |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 23.8A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 160mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 176W |
| Typical Gate Charge Qg @ Vgs | 44nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 0.9V |
Key Features
- Type N-channel MOSFET with 23.8A maximum continuous drain current and 600V drain-source voltage.
- Features enhancement mode operation for efficient switching performance.
- Offers low drain-source resistance of 160mΩ and high ruggedness for demanding applications.
- Supplied in a TO-220 package for through-hole mounting and robust thermal management.
- Operates within a temperature range of -55°C to +150°C for industrial reliability.
- Qualified to JEDEC standards for use in industrial-grade environments.
- Ideal for power supplies, industrial automation, and switch-mode power conversions.
- Includes 3 pins for streamlined integration and features a maximum power dissipation of 176W.
Product Description
The Infineon IPP60R160P6XKSA1 is a high-performance CoolMOS P6 N-channel MOSFET designed for use in high-voltage switching applications up to 600V. With a maximum continuous drain current of 23.8A and an enhancement mode channel, this device delivers efficient switching characteristics alongside extremely low conduction and switching losses. The CoolMOS P6 series offers a significant improvement in efficiency, compactness, and reliability for industrial and power electronics engineers.
Manufactured in a rugged TO-220 package, the IPP60R160P6XKSA1 is suitable for through-hole mounting, ensuring robust connectivity and effective heat dissipation. A very low maximum drain-source resistance of 160mΩ further increases electrical efficiency, while the device can safely operate from -55°C to +150°C, making it appropriate for harsh industrial conditions. With a high power dissipation capability of 176W and a 20V maximum gate-source voltage, it is ideal for tasks requiring reliable, fast, and safe switching operations.
Type N-channel MOSFET, fully enhancement-mode for high-speed applications. Delivers a maximum drain current of 23.8A and withstands up to 600V drain-source voltage. Ultra-low on-resistance (160mΩ) minimizes energy losses.
Through-hole TO-220 package improves mounting flexibility and heat management. Typical gate charge at Vgs is 44nC for efficient control in switching power supplies. Wide operational temperature range ensures performance in industrial environments.
Engineered for industrial automation, power supplies, motor drive, and switch-mode power supply (SMPS) systems.
This device meets JEDEC (J-STD20 and JESD22) industrial-grade qualification standards. Its features deliver high commutation ruggedness and simple drive capability, making it easy to integrate into a wide range of professional applications such as industrial automation, high-performance power conversion, and energy-efficient supply units.
For all your discrete semiconductor and power electronics needs, explore the full range of Infineon CoolMOS products and other high-performance components in the EnvMart MOSFET category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 23.8A.
It has a maximum drain-source voltage rating of 600V.
This model is supplied in a TO-220 package, suitable for through-hole mounting.
The typical gate charge at Vgs is 44nC, which aids in efficient control during switching operations.
It can handle a maximum power dissipation of 176W.
The operating temperature range is from -55°C to +150°C, ensuring reliability in industrial environments.
The maximum drain-source resistance is 160mΩ, which helps minimize energy losses.
This model features a total of 3 pins for streamlined integration.
It utilizes a Type N-channel, fully enhancement-mode for high-speed applications.
The dimensions of the TO-220 package are 10.36mm in length, 4.57mm in width, and 9.45mm in height.
Yes, it is qualified to JEDEC standards for use in industrial-grade environments.
It is ideal for applications such as power supplies, industrial automation, and switch-mode power conversions.
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